Growth and characterization of OMVPE grown (In, Mn)As diluted magnetic semiconductor

A. J. Blattner*, J. Lensch, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

47 Scopus citations

Abstract

In1-xMnxAs diluted magnetic semiconductor (DMS) thin films with x ≤ 0.14 have been grown using organometallic vapor phase epitaxy. Tricarbonyl-(methylcyclopentadienyl) manganese was successfully used as the Mn source. Single phase, epitaxial films were achieved for compositions as high as x = 0.14 using growth temperatures ≥ 475°C. For lower growth temperatures or x > 0.14, nanometer scale MnAs precipitates were observed within the In1-xMnxAs matrix. Transport properties were investigated using the Hall effect. All Mn doped films were p-type with single phase films exhibiting hole concentrations ≤ 2 × 1019 cm-3. Magnetization was measured as a function of temperature and applied field for a single phase film with x = 0.1. Ferromagnetic ordering was observed at 5 K with a saturation magnetization of Ms = 68 emu/cm3, a remnant magnetization, Mr = 10 emu/cm3, and a coercive field-Hc = 400 Oe.

Original languageEnglish (US)
Pages (from-to)1408-1411
Number of pages4
JournalJournal of Electronic Materials
Volume30
Issue number11
DOIs
StatePublished - Nov 2001

Keywords

  • Diluted magnetic semiconductors
  • Indium manganese arsenide
  • Spintronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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