The purpose of this article is to set forth the latest results obtained concerning: the growth and characterization of InP layers; the growth and characterization of Ga//0//. //4//7In//0//. //5//3As layers; the growth of InP-GaInAs thin films exhibiting quantum size effects; the properties of the two-dimensional electron gas lying at the GaInAs-InP interface.
|Translated title of the contribution||Growth and Characterization of the Heterojunction and Quantum Well of GaInAs-InP Structures Obtained by MOCVD.|
|Number of pages||23|
|Journal||Revue technique - Thomson-CSF|
|State||Published - Jan 1 1984|
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