CROISSANCE ET CARACTERISATION DE L'HETEROJONCTION ET DE STRUCTURES A PUITS QUANTIQUES GaInAs-InP OBTENUES PAR MOCVD.

Translated title of the contribution: Growth and Characterization of the Heterojunction and Quantum Well of GaInAs-InP Structures Obtained by MOCVD.

M. Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The purpose of this article is to set forth the latest results obtained concerning: the growth and characterization of InP layers; the growth and characterization of Ga//0//. //4//7In//0//. //5//3As layers; the growth of InP-GaInAs thin films exhibiting quantum size effects; the properties of the two-dimensional electron gas lying at the GaInAs-InP interface.

Translated title of the contributionGrowth and Characterization of the Heterojunction and Quantum Well of GaInAs-InP Structures Obtained by MOCVD.
Original languageFrench
Pages (from-to)5-27
Number of pages23
JournalRevue technique - Thomson-CSF
Volume16
Issue number1
StatePublished - 1984

ASJC Scopus subject areas

  • General Engineering

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