Abstract
The purpose of this article is to set forth the latest results obtained concerning: the growth and characterization of InP layers; the growth and characterization of Ga//0//. //4//7In//0//. //5//3As layers; the growth of InP-GaInAs thin films exhibiting quantum size effects; the properties of the two-dimensional electron gas lying at the GaInAs-InP interface.
| Translated title of the contribution | Growth and Characterization of the Heterojunction and Quantum Well of GaInAs-InP Structures Obtained by MOCVD. |
|---|---|
| Original language | French |
| Pages (from-to) | 5-27 |
| Number of pages | 23 |
| Journal | Revue technique - Thomson-CSF |
| Volume | 16 |
| Issue number | 1 |
| State | Published - 1984 |
ASJC Scopus subject areas
- General Engineering