CROISSANCE ET CARACTERISATION DE L'HETEROJONCTION ET DE STRUCTURES A PUITS QUANTIQUES GaInAs-InP OBTENUES PAR MOCVD.

M. Razeghi

CROISSANCE ET CARACTERISATION DE L'HETEROJONCTION ET DE STRUCTURES A PUITS QUANTIQUES GaInAs-InP OBTENUES PAR MOCVD.

Translated title of the contribution: Growth and Characterization of the Heterojunction and Quantum Well of GaInAs-InP Structures Obtained by MOCVD.

M. Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The purpose of this article is to set forth the latest results obtained concerning: the growth and characterization of InP layers; the growth and characterization of Ga//0//. //4//7In//0//. //5//3As layers; the growth of InP-GaInAs thin films exhibiting quantum size effects; the properties of the two-dimensional electron gas lying at the GaInAs-InP interface.

Translated title of the contribution	Growth and Characterization of the Heterojunction and Quantum Well of GaInAs-InP Structures Obtained by MOCVD.
Original language	French
Pages (from-to)	5-27
Number of pages	23
Journal	Revue technique - Thomson-CSF
Volume	16
Issue number	1
State	Published - Jan 1 1984

ASJC Scopus subject areas

Engineering(all)

Cite this

@article{d827f0289f254f74958ad8f95282a3f4,

title = "CROISSANCE ET CARACTERISATION DE L'HETEROJONCTION ET DE STRUCTURES A PUITS QUANTIQUES GaInAs-InP OBTENUES PAR MOCVD.",

abstract = "The purpose of this article is to set forth the latest results obtained concerning: the growth and characterization of InP layers; the growth and characterization of Ga//0//. //4//7In//0//. //5//3As layers; the growth of InP-GaInAs thin films exhibiting quantum size effects; the properties of the two-dimensional electron gas lying at the GaInAs-InP interface.",

author = "M. Razeghi",

year = "1984",

month = jan,

day = "1",

language = "French",

volume = "16",

pages = "5--27",

journal = "Revue technique - Thomson-CSF",

issn = "0035-4279",

number = "1",

}

TY - JOUR

T1 - CROISSANCE ET CARACTERISATION DE L'HETEROJONCTION ET DE STRUCTURES A PUITS QUANTIQUES GaInAs-InP OBTENUES PAR MOCVD.

AU - Razeghi, M.

PY - 1984/1/1

Y1 - 1984/1/1

N2 - The purpose of this article is to set forth the latest results obtained concerning: the growth and characterization of InP layers; the growth and characterization of Ga//0//. //4//7In//0//. //5//3As layers; the growth of InP-GaInAs thin films exhibiting quantum size effects; the properties of the two-dimensional electron gas lying at the GaInAs-InP interface.

AB - The purpose of this article is to set forth the latest results obtained concerning: the growth and characterization of InP layers; the growth and characterization of Ga//0//. //4//7In//0//. //5//3As layers; the growth of InP-GaInAs thin films exhibiting quantum size effects; the properties of the two-dimensional electron gas lying at the GaInAs-InP interface.

UR - http://www.scopus.com/inward/record.url?scp=0021389339&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021389339&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0021389339

SN - 0035-4279

VL - 16

SP - 5

EP - 27

JO - Revue technique - Thomson-CSF

JF - Revue technique - Thomson-CSF

IS - 1

ER -

CROISSANCE ET CARACTERISATION DE L'HETEROJONCTION ET DE STRUCTURES A PUITS QUANTIQUES GaInAs-InP OBTENUES PAR MOCVD.

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this