CROISSANCE ET CARACTERISATION DE L'HETEROJONCTION ET DE STRUCTURES A PUITS QUANTIQUES GaInAs-InP OBTENUES PAR MOCVD.

Translated title of the contribution: Growth and Characterization of the Heterojunction and Quantum Well of GaInAs-InP Structures Obtained by MOCVD.

M. Razeghi*

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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