Growth and characterization of type-II non-equilibrium photovoltaic detectors for long wavelength infrared range

Hooman Mohseni*, Joseph S. Wojkowski, Abbes Tahraoui, Manijeh Razeghi, G. Brown, W. Mitchel

*Corresponding author for this work

Research output: Contribution to journalConference article

17 Scopus citations

Abstract

Growth and characterization of type-II detectors for mid-infrared wavelength range is presented. The device has a p-i-n structure is designed to operate in the non-equilibrium mode with low tunneling current. The active layer is a short period InAs/GaSb superlattice. Wider bandgap p-type AlSb and n-type InAs layers are used to facilitate the extraction of both electrons and holes from the active layer for the first time. The performance of these devices were compared to the performance of devices grown at the same condition, but without the AlSb barrier layers. The processed devices with the AlSb barrier show a peak responsivity of about 1.2 A/W with Johnson noise limited detectivity of 1.1×10 11 cm·Hz 1/2 W at 8 μm at 80 K at zero bias. The details of the modeling, growth, and characterizations will be presented.

Original languageEnglish (US)
Pages (from-to)153-160
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3948
StatePublished - Jan 1 2000
EventPhotodetectors: Materials and Devices V - San Jose, CA, USA
Duration: Jan 25 2000Jan 28 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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