Growth and characterization of very long wavelength type-II infrared detectors

Hooman Mohseni*, Abbes Tahraoui, Joseph S. Wojkowski, Manijeh Razeghi, W. Mitchel, A. Saxler

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We report on the growth and characterization of type-II infrared detectors with a InAs/GaSb superlattice active layer in the 15-19 μm wavelength range. The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. The material was processed into photoconductive detectors using standard photolithography, dry etching, and metalization. The 50% cut-off wavelength of the detectors is about 15.5 μm with a responsivity of 90 mA/W at 80 K. The 90%-10% cut-off energy width of the responsivity is only 17 mev (less than 3 kT) which is an indication of the uniformity of the superlattices. These are the best reported values for type-II superlattices grown on GaAs substrates.

Original languageEnglish (US)
Pages (from-to)145-152
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3948
StatePublished - Jan 1 2000

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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