Growth and characterization of very long wavelength type-II infrared detectors

Hooman Mohseni; Abbes Tahraoui; Joseph S. Wojkowski; Manijeh Razeghi; W. Mitchel; A. Saxler

doi:10.1117/12.382113

Growth and characterization of very long wavelength type-II infrared detectors

Hooman Mohseni^*, Abbes Tahraoui, Joseph S. Wojkowski, Manijeh Razeghi, W. Mitchel, A. Saxler

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

14 Scopus citations

Abstract

We report on the growth and characterization of type-II infrared detectors with a InAs/GaSb superlattice active layer in the 15-19 μm wavelength range. The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. The material was processed into photoconductive detectors using standard photolithography, dry etching, and metalization. The 50% cut-off wavelength of the detectors is about 15.5 μm with a responsivity of 90 mA/W at 80 K. The 90%-10% cut-off energy width of the responsivity is only 17 mev (less than 3 kT) which is an indication of the uniformity of the superlattices. These are the best reported values for type-II superlattices grown on GaAs substrates.

Original language	English (US)
Pages (from-to)	145-152
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3948
DOIs	https://doi.org/10.1117/12.382113
State	Published - 2000
Event	Photodetectors: Materials and Devices V - San Jose, CA, USA Duration: Jan 25 2000 → Jan 28 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Applied Mathematics
Electrical and Electronic Engineering
Computer Science Applications

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title = "Growth and characterization of very long wavelength type-II infrared detectors",

abstract = "We report on the growth and characterization of type-II infrared detectors with a InAs/GaSb superlattice active layer in the 15-19 μm wavelength range. The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. The material was processed into photoconductive detectors using standard photolithography, dry etching, and metalization. The 50% cut-off wavelength of the detectors is about 15.5 μm with a responsivity of 90 mA/W at 80 K. The 90%-10% cut-off energy width of the responsivity is only 17 mev (less than 3 kT) which is an indication of the uniformity of the superlattices. These are the best reported values for type-II superlattices grown on GaAs substrates.",

author = "Hooman Mohseni and Abbes Tahraoui and Wojkowski, {Joseph S.} and Manijeh Razeghi and W. Mitchel and A. Saxler",

year = "2000",

doi = "10.1117/12.382113",

language = "English (US)",

volume = "3948",

pages = "145--152",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Photodetectors: Materials and Devices V ; Conference date: 25-01-2000 Through 28-01-2000",

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TY - JOUR

T1 - Growth and characterization of very long wavelength type-II infrared detectors

AU - Mohseni, Hooman

AU - Tahraoui, Abbes

AU - Wojkowski, Joseph S.

AU - Razeghi, Manijeh

AU - Mitchel, W.

AU - Saxler, A.

PY - 2000

Y1 - 2000

N2 - We report on the growth and characterization of type-II infrared detectors with a InAs/GaSb superlattice active layer in the 15-19 μm wavelength range. The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. The material was processed into photoconductive detectors using standard photolithography, dry etching, and metalization. The 50% cut-off wavelength of the detectors is about 15.5 μm with a responsivity of 90 mA/W at 80 K. The 90%-10% cut-off energy width of the responsivity is only 17 mev (less than 3 kT) which is an indication of the uniformity of the superlattices. These are the best reported values for type-II superlattices grown on GaAs substrates.

AB - We report on the growth and characterization of type-II infrared detectors with a InAs/GaSb superlattice active layer in the 15-19 μm wavelength range. The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. The material was processed into photoconductive detectors using standard photolithography, dry etching, and metalization. The 50% cut-off wavelength of the detectors is about 15.5 μm with a responsivity of 90 mA/W at 80 K. The 90%-10% cut-off energy width of the responsivity is only 17 mev (less than 3 kT) which is an indication of the uniformity of the superlattices. These are the best reported values for type-II superlattices grown on GaAs substrates.

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DO - 10.1117/12.382113

M3 - Conference article

AN - SCOPUS:0033740097

SN - 0277-786X

VL - 3948

SP - 145

EP - 152

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Photodetectors: Materials and Devices V

Y2 - 25 January 2000 through 28 January 2000

ER -

Growth and characterization of very long wavelength type-II infrared detectors

Abstract

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