We report on the growth and characterization of type-II infrared detectors with a InAs/GaSb superlattice active layer in the 15-19 μm wavelength range. The material was grown by molecular beam epitaxy on semi-insulating GaAs substrates. The material was processed into photoconductive detectors using standard photolithography, dry etching, and metalization. The 50% cut-off wavelength of the detectors is about 15.5 μm with a responsivity of 90 mA/W at 80 K. The 90%-10% cut-off energy width of the responsivity is only 17 mev (less than 3 kT) which is an indication of the uniformity of the superlattices. These are the best reported values for type-II superlattices grown on GaAs substrates.
|Original language||English (US)|
|Number of pages||8|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - Jan 1 2000|
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics