Growth and magnetic and electrical-transport properties of NiAs structured Mn1-xGaxAs thin films

J. H. Song, Y. Cui, J. B. Ketterson

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2 Scopus citations


We have successfully fabricated epitaxial Mn1-x Gax As thin films with the NiAs crystal structure on GaAs(001) substrates by molecular-beam epitaxy characterized by their magnetic and electrical-transport properties. For a sample with x=0.17, the magnetic Curie temperature (TC) was ∼340 K, which exceeds room temperature, and a high anisotropy in the M-H hysteresis loops was observed. Furthermore, the temperature dependence of the resistance shows a semiconducting behavior with an indication of an interplay between the charge carriers and localized magnetic ions. The magnetoresistance is different from that of a MnAs film, indicating a radical alteration of electronic structure by a partial substitution of Ga for Mn in NiAs structured MnAs.

Original languageEnglish (US)
Article number07D102
JournalJournal of Applied Physics
Issue number7
StatePublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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