Growth and magnetic and electrical-transport properties of NiAs structured Mn1-xGaxAs thin films

J. H. Song; Y. Cui; J. B. Ketterson

doi:10.1063/1.2830685

Growth and magnetic and electrical-transport properties of NiAs structured Mn_1-xGa_xAs thin films

J. H. Song, Y. Cui, J. B. Ketterson

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have successfully fabricated epitaxial Mn1-x Gax As thin films with the NiAs crystal structure on GaAs(001) substrates by molecular-beam epitaxy characterized by their magnetic and electrical-transport properties. For a sample with x=0.17, the magnetic Curie temperature (TC) was ∼340 K, which exceeds room temperature, and a high anisotropy in the M-H hysteresis loops was observed. Furthermore, the temperature dependence of the resistance shows a semiconducting behavior with an indication of an interplay between the charge carriers and localized magnetic ions. The magnetoresistance is different from that of a MnAs film, indicating a radical alteration of electronic structure by a partial substitution of Ga for Mn in NiAs structured MnAs.

Original language	English (US)
Article number	07D102
Journal	Journal of Applied Physics
Volume	103
Issue number	7
DOIs	https://doi.org/10.1063/1.2830685
State	Published - 2008

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.2830685

Cite this

@article{6414f99b8cef45ed8768699684cd6b85,

title = "Growth and magnetic and electrical-transport properties of NiAs structured Mn1-xGaxAs thin films",

abstract = "We have successfully fabricated epitaxial Mn1-x Gax As thin films with the NiAs crystal structure on GaAs(001) substrates by molecular-beam epitaxy characterized by their magnetic and electrical-transport properties. For a sample with x=0.17, the magnetic Curie temperature (TC) was ∼340 K, which exceeds room temperature, and a high anisotropy in the M-H hysteresis loops was observed. Furthermore, the temperature dependence of the resistance shows a semiconducting behavior with an indication of an interplay between the charge carriers and localized magnetic ions. The magnetoresistance is different from that of a MnAs film, indicating a radical alteration of electronic structure by a partial substitution of Ga for Mn in NiAs structured MnAs.",

author = "Song, {J. H.} and Y. Cui and Ketterson, {J. B.}",

note = "Funding Information: This study was financially supported by research fund of Chungnam National University in 2007. ",

year = "2008",

doi = "10.1063/1.2830685",

language = "English (US)",

volume = "103",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Growth and magnetic and electrical-transport properties of NiAs structured Mn1-xGaxAs thin films

AU - Song, J. H.

AU - Cui, Y.

AU - Ketterson, J. B.

N1 - Funding Information: This study was financially supported by research fund of Chungnam National University in 2007.

PY - 2008

Y1 - 2008

N2 - We have successfully fabricated epitaxial Mn1-x Gax As thin films with the NiAs crystal structure on GaAs(001) substrates by molecular-beam epitaxy characterized by their magnetic and electrical-transport properties. For a sample with x=0.17, the magnetic Curie temperature (TC) was ∼340 K, which exceeds room temperature, and a high anisotropy in the M-H hysteresis loops was observed. Furthermore, the temperature dependence of the resistance shows a semiconducting behavior with an indication of an interplay between the charge carriers and localized magnetic ions. The magnetoresistance is different from that of a MnAs film, indicating a radical alteration of electronic structure by a partial substitution of Ga for Mn in NiAs structured MnAs.

AB - We have successfully fabricated epitaxial Mn1-x Gax As thin films with the NiAs crystal structure on GaAs(001) substrates by molecular-beam epitaxy characterized by their magnetic and electrical-transport properties. For a sample with x=0.17, the magnetic Curie temperature (TC) was ∼340 K, which exceeds room temperature, and a high anisotropy in the M-H hysteresis loops was observed. Furthermore, the temperature dependence of the resistance shows a semiconducting behavior with an indication of an interplay between the charge carriers and localized magnetic ions. The magnetoresistance is different from that of a MnAs film, indicating a radical alteration of electronic structure by a partial substitution of Ga for Mn in NiAs structured MnAs.

UR - http://www.scopus.com/inward/record.url?scp=42149152778&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42149152778&partnerID=8YFLogxK

U2 - 10.1063/1.2830685

DO - 10.1063/1.2830685

M3 - Article

AN - SCOPUS:42149152778

SN - 0021-8979

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 07D102

ER -

Growth and magnetic and electrical-transport properties of NiAs structured Mn_1-xGa_xAs thin films

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this