Growth and magnetic and electrical-transport properties of NiAs structured Mn_1-xGa_xAs thin films

INIS

• thin films 100%
• transport 100%
• manganese arsenides 100%
• growth 50%
• films 50%
• electronic structure 50%
• substrates 50%
• ions 50%
• temperature range 0273-0400 k 50%
• anisotropy 50%
• molecular beam epitaxy 50%
• crystal structure 50%
• epitaxy 50%
• temperature dependence 50%
• charge carriers 50%
• magnetoresistance 50%
• hysteresis 50%
• gallium arsenides 50%
• curie temperature 50%

Chemistry

• Transport Property 100%
• Charge Transfer 100%
• Anisotropy 50%
• Crystal Structure 50%
• Substitution Reaction 50%
• Electronic State 50%
• Molecular Beam Epitaxy 50%
• Charge Carrier 50%
• Liquid Film 50%
• Inorganic Ion 50%
• Magnetoresistance 50%
• Hysteresis 50%
• Curie Temperature 50%
• Ambient Reaction Temperature 50%
• Sample 50%
• Reaction Temperature 50%
• Resistance 50%

Material Science

• Thin Films 100%
• Gallium Arsenide 50%
• Liquid Films 50%
• Crystal Structure 50%
• Charge Carrier 50%