Growth and microstructure of MgO thin films on Si(100) substrates by metal-organic molecular beam epitaxy

F. Niu*, B. H. Hoerman, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

MgO thin films have been grown on Si(100) substrates at low temperatures of 500-850°C by metal-organic molecular beam epitaxy (MOMBE) using the solid precursor magnesium acetylacetonate. Oxygen plasma is required to achieve deposition. The composition of the films was determined by Auger electron spectroscopy (AES). The as-deposited films are phase-pure, stoichiometric, crystalline MgO with a [100] texture. Carbon contamination of the film resulting from precursor decomposition was not observed within detection limits. The deposition rate depended superlinearly on the plasma source power.

Original languageEnglish (US)
Pages (from-to)74-77
Number of pages4
JournalApplied Surface Science
Volume161
Issue number1
DOIs
StatePublished - Jul 1 2000

Funding

The authors are grateful to Dr. Antonio DiVenere for his expert assistance with the MOMBE experiment and for sharing his valuable experience with us. This work was supported by DARPA through the MURI program at Northwestern University monitored by the AFOSR under grant F49620-96-1-0262 and by BMDO through the DURIP program under F49620-96-1-0460.

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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