Growth and microstructure of MgO thin films on Si(100) substrates by metal-organic molecular beam epitaxy

F. Niu; B. H. Hoerman; B. W. Wessels

doi:10.1016/S0169-4332(00)00127-6

Growth and microstructure of MgO thin films on Si(100) substrates by metal-organic molecular beam epitaxy

F. Niu^*, B. H. Hoerman, B. W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

MgO thin films have been grown on Si(100) substrates at low temperatures of 500-850°C by metal-organic molecular beam epitaxy (MOMBE) using the solid precursor magnesium acetylacetonate. Oxygen plasma is required to achieve deposition. The composition of the films was determined by Auger electron spectroscopy (AES). The as-deposited films are phase-pure, stoichiometric, crystalline MgO with a [100] texture. Carbon contamination of the film resulting from precursor decomposition was not observed within detection limits. The deposition rate depended superlinearly on the plasma source power.

Original language	English (US)
Pages (from-to)	74-77
Number of pages	4
Journal	Applied Surface Science
Volume	161
Issue number	1
DOIs	https://doi.org/10.1016/S0169-4332(00)00127-6
State	Published - Jul 1 2000

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(00)00127-6

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title = "Growth and microstructure of MgO thin films on Si(100) substrates by metal-organic molecular beam epitaxy",

abstract = "MgO thin films have been grown on Si(100) substrates at low temperatures of 500-850°C by metal-organic molecular beam epitaxy (MOMBE) using the solid precursor magnesium acetylacetonate. Oxygen plasma is required to achieve deposition. The composition of the films was determined by Auger electron spectroscopy (AES). The as-deposited films are phase-pure, stoichiometric, crystalline MgO with a [100] texture. Carbon contamination of the film resulting from precursor decomposition was not observed within detection limits. The deposition rate depended superlinearly on the plasma source power.",

author = "F. Niu and Hoerman, {B. H.} and Wessels, {B. W.}",

note = "Funding Information: The authors are grateful to Dr. Antonio DiVenere for his expert assistance with the MOMBE experiment and for sharing his valuable experience with us. This work was supported by DARPA through the MURI program at Northwestern University monitored by the AFOSR under grant F49620-96-1-0262 and by BMDO through the DURIP program under F49620-96-1-0460. ",

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doi = "10.1016/S0169-4332(00)00127-6",

language = "English (US)",

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T1 - Growth and microstructure of MgO thin films on Si(100) substrates by metal-organic molecular beam epitaxy

AU - Niu, F.

AU - Hoerman, B. H.

AU - Wessels, B. W.

N1 - Funding Information: The authors are grateful to Dr. Antonio DiVenere for his expert assistance with the MOMBE experiment and for sharing his valuable experience with us. This work was supported by DARPA through the MURI program at Northwestern University monitored by the AFOSR under grant F49620-96-1-0262 and by BMDO through the DURIP program under F49620-96-1-0460.

PY - 2000/7/1

Y1 - 2000/7/1

N2 - MgO thin films have been grown on Si(100) substrates at low temperatures of 500-850°C by metal-organic molecular beam epitaxy (MOMBE) using the solid precursor magnesium acetylacetonate. Oxygen plasma is required to achieve deposition. The composition of the films was determined by Auger electron spectroscopy (AES). The as-deposited films are phase-pure, stoichiometric, crystalline MgO with a [100] texture. Carbon contamination of the film resulting from precursor decomposition was not observed within detection limits. The deposition rate depended superlinearly on the plasma source power.

AB - MgO thin films have been grown on Si(100) substrates at low temperatures of 500-850°C by metal-organic molecular beam epitaxy (MOMBE) using the solid precursor magnesium acetylacetonate. Oxygen plasma is required to achieve deposition. The composition of the films was determined by Auger electron spectroscopy (AES). The as-deposited films are phase-pure, stoichiometric, crystalline MgO with a [100] texture. Carbon contamination of the film resulting from precursor decomposition was not observed within detection limits. The deposition rate depended superlinearly on the plasma source power.

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Growth and microstructure of MgO thin films on Si(100) substrates by metal-organic molecular beam epitaxy

Abstract

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