Growth and optical properties of single-crystal metastable (GaAs)1-xGex alloys

S. A. BARNETT; M. A. RAY; A. LASTRAS; B. KRAMER; J. E. GREENE; P. M. RACCAH; L. L. ABELS

doi:10.1049/el:19820604

Growth and optical properties of single-crystal metastable (GaAs)_1-xGe_x alloys

S. A. BARNETT, M. A. RAY, A. LASTRAS, B. KRAMER, J. E. GREENE, P. M. RACCAH, L. L. ABELS

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

Single-crystal metastable (GaAs)_1-xGe_x alloys with 0 ⩽ x ⩽ 1 have been grown on (100) GaAs substrates using ultra-high-vacuum ion-beam sputter deposition. Optical absorption measurements showed that the direct gap E₀exhibited a large negative, but nonparabolic, bowing as a function of x with a broad minimum E₀ ≃ 0·5 eV near 35 mole % Ge. Raman results exhibited a nonlinear ‘single-mode’ behaviour, with the longitudinal and transverse optical modes becoming degenerate at x = 1.

Original language	English (US)
Pages (from-to)	891-892
Number of pages	2
Journal	Electronics Letters
Volume	18
Issue number	20
DOIs	https://doi.org/10.1049/el:19820604
State	Published - Sep 30 1982

Keywords

Semiconductor devices and materials
Semiconductors (III-V)

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19820604

Cite this

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title = "Growth and optical properties of single-crystal metastable (GaAs)1-xGex alloys",

abstract = "Single-crystal metastable (GaAs)1-xGex alloys with 0 ⩽ x ⩽ 1 have been grown on (100) GaAs substrates using ultra-high-vacuum ion-beam sputter deposition. Optical absorption measurements showed that the direct gap E0exhibited a large negative, but nonparabolic, bowing as a function of x with a broad minimum E0 ≃ 0·5 eV near 35 mole % Ge. Raman results exhibited a nonlinear {\textquoteleft}single-mode{\textquoteright} behaviour, with the longitudinal and transverse optical modes becoming degenerate at x = 1.",

keywords = "Semiconductor devices and materials, Semiconductors (III-V)",

author = "BARNETT, {S. A.} and RAY, {M. A.} and A. LASTRAS and B. KRAMER and GREENE, {J. E.} and RACCAH, {P. M.} and ABELS, {L. L.}",

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T1 - Growth and optical properties of single-crystal metastable (GaAs)1-xGex alloys

AU - BARNETT, S. A.

AU - RAY, M. A.

AU - LASTRAS, A.

AU - KRAMER, B.

AU - GREENE, J. E.

AU - RACCAH, P. M.

AU - ABELS, L. L.

PY - 1982/9/30

Y1 - 1982/9/30

N2 - Single-crystal metastable (GaAs)1-xGex alloys with 0 ⩽ x ⩽ 1 have been grown on (100) GaAs substrates using ultra-high-vacuum ion-beam sputter deposition. Optical absorption measurements showed that the direct gap E0exhibited a large negative, but nonparabolic, bowing as a function of x with a broad minimum E0 ≃ 0·5 eV near 35 mole % Ge. Raman results exhibited a nonlinear ‘single-mode’ behaviour, with the longitudinal and transverse optical modes becoming degenerate at x = 1.

AB - Single-crystal metastable (GaAs)1-xGex alloys with 0 ⩽ x ⩽ 1 have been grown on (100) GaAs substrates using ultra-high-vacuum ion-beam sputter deposition. Optical absorption measurements showed that the direct gap E0exhibited a large negative, but nonparabolic, bowing as a function of x with a broad minimum E0 ≃ 0·5 eV near 35 mole % Ge. Raman results exhibited a nonlinear ‘single-mode’ behaviour, with the longitudinal and transverse optical modes becoming degenerate at x = 1.

KW - Semiconductor devices and materials

KW - Semiconductors (III-V)

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