Growth and optical properties of single-crystal metastable (GaAs)1-xGex alloys

S. A. BARNETT, M. A. RAY, A. LASTRAS, B. KRAMER, J. E. GREENE, P. M. RACCAH, L. L. ABELS

Research output: Contribution to journalArticlepeer-review

70 Scopus citations

Abstract

Single-crystal metastable (GaAs)1-xGex alloys with 0 ⩽ x ⩽ 1 have been grown on (100) GaAs substrates using ultra-high-vacuum ion-beam sputter deposition. Optical absorption measurements showed that the direct gap E0exhibited a large negative, but nonparabolic, bowing as a function of x with a broad minimum E0 ≃ 0·5 eV near 35 mole % Ge. Raman results exhibited a nonlinear ‘single-mode’ behaviour, with the longitudinal and transverse optical modes becoming degenerate at x = 1.

Original languageEnglish (US)
Pages (from-to)891-892
Number of pages2
JournalElectronics Letters
Volume18
Issue number20
DOIs
StatePublished - Sep 30 1982

Keywords

  • Semiconductor devices and materials
  • Semiconductors (III-V)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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