Single-crystal metastable (GaAs)1-xGex alloys with 0 ⩽ x ⩽ 1 have been grown on (100) GaAs substrates using ultra-high-vacuum ion-beam sputter deposition. Optical absorption measurements showed that the direct gap E0exhibited a large negative, but nonparabolic, bowing as a function of x with a broad minimum E0 ≃ 0·5 eV near 35 mole % Ge. Raman results exhibited a nonlinear ‘single-mode’ behaviour, with the longitudinal and transverse optical modes becoming degenerate at x = 1.
- Semiconductor devices and materials
- Semiconductors (III-V)
ASJC Scopus subject areas
- Electrical and Electronic Engineering