Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications

M. Erdtmann*, J. Jiang, A. Matlis, A. Tahraoui, C. Jelen, M. Razeghi, G. J. Brown

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

Multi-quantum well structures of GaxIn1-xASyP1-y were grown by metalorganic chemical vapor deposition for the fabrication of quantum well infrared photodetectors. The thickness and composition of the wells was determined by high-resolution x-ray diffraction and photoluminescence experiments. The intersubband absorption spectrum of the Ga0.47In0.53As/InP, Ga0.38In0.62As0.80P0.20 (1.55 μm)/InP, and Ga0.27In0.73As0.57P0.43 (1.3 μm)/InP quantum wells are found to have cutoff wavelengths of 9.3 μm, 10.7 μm, and 14.2 μm respectively. These wavelengths are consistent with a conduction band offset to bandgap ratio of approximately 0.32. Facet coupled illumination responsivity and detectivity are reported for each composition.

Original languageEnglish (US)
Pages (from-to)227-232
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3948
DOIs
StatePublished - Jan 1 2000
EventPhotodetectors: Materials and Devices V - San Jose, CA, USA
Duration: Jan 25 2000Jan 28 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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