Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications

M. Erdtmann; J. Jiang; A. Matlis; A. Tahraoui; C. Jelen; M. Razeghi; G. J. Brown

doi:10.1117/12.382123

Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications

M. Erdtmann^*, J. Jiang, A. Matlis, A. Tahraoui, C. Jelen, M. Razeghi, G. J. Brown

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

Multi-quantum well structures of Ga_xIn_1-xAS_yP_1-y were grown by metalorganic chemical vapor deposition for the fabrication of quantum well infrared photodetectors. The thickness and composition of the wells was determined by high-resolution x-ray diffraction and photoluminescence experiments. The intersubband absorption spectrum of the Ga_0.47In_0.53As/InP, Ga_0.38In_0.62As_0.80P_0.20 (1.55 μm)/InP, and Ga_0.27In_0.73As_0.57P_0.43 (1.3 μm)/InP quantum wells are found to have cutoff wavelengths of 9.3 μm, 10.7 μm, and 14.2 μm respectively. These wavelengths are consistent with a conduction band offset to bandgap ratio of approximately 0.32. Facet coupled illumination responsivity and detectivity are reported for each composition.

Original language	English (US)
Pages (from-to)	227-232
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3948
DOIs	https://doi.org/10.1117/12.382123
State	Published - Jan 1 2000
Event	Photodetectors: Materials and Devices V - San Jose, CA, USA Duration: Jan 25 2000 → Jan 28 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications",

abstract = "Multi-quantum well structures of GaxIn1-xASyP1-y were grown by metalorganic chemical vapor deposition for the fabrication of quantum well infrared photodetectors. The thickness and composition of the wells was determined by high-resolution x-ray diffraction and photoluminescence experiments. The intersubband absorption spectrum of the Ga0.47In0.53As/InP, Ga0.38In0.62As0.80P0.20 (1.55 μm)/InP, and Ga0.27In0.73As0.57P0.43 (1.3 μm)/InP quantum wells are found to have cutoff wavelengths of 9.3 μm, 10.7 μm, and 14.2 μm respectively. These wavelengths are consistent with a conduction band offset to bandgap ratio of approximately 0.32. Facet coupled illumination responsivity and detectivity are reported for each composition.",

author = "M. Erdtmann and J. Jiang and A. Matlis and A. Tahraoui and C. Jelen and M. Razeghi and Brown, {G. J.}",

year = "2000",

month = jan,

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doi = "10.1117/12.382123",

language = "English (US)",

volume = "3948",

pages = "227--232",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Photodetectors: Materials and Devices V ; Conference date: 25-01-2000 Through 28-01-2000",

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T1 - Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications

AU - Erdtmann, M.

AU - Jiang, J.

AU - Matlis, A.

AU - Tahraoui, A.

AU - Jelen, C.

AU - Razeghi, M.

AU - Brown, G. J.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Multi-quantum well structures of GaxIn1-xASyP1-y were grown by metalorganic chemical vapor deposition for the fabrication of quantum well infrared photodetectors. The thickness and composition of the wells was determined by high-resolution x-ray diffraction and photoluminescence experiments. The intersubband absorption spectrum of the Ga0.47In0.53As/InP, Ga0.38In0.62As0.80P0.20 (1.55 μm)/InP, and Ga0.27In0.73As0.57P0.43 (1.3 μm)/InP quantum wells are found to have cutoff wavelengths of 9.3 μm, 10.7 μm, and 14.2 μm respectively. These wavelengths are consistent with a conduction band offset to bandgap ratio of approximately 0.32. Facet coupled illumination responsivity and detectivity are reported for each composition.

AB - Multi-quantum well structures of GaxIn1-xASyP1-y were grown by metalorganic chemical vapor deposition for the fabrication of quantum well infrared photodetectors. The thickness and composition of the wells was determined by high-resolution x-ray diffraction and photoluminescence experiments. The intersubband absorption spectrum of the Ga0.47In0.53As/InP, Ga0.38In0.62As0.80P0.20 (1.55 μm)/InP, and Ga0.27In0.73As0.57P0.43 (1.3 μm)/InP quantum wells are found to have cutoff wavelengths of 9.3 μm, 10.7 μm, and 14.2 μm respectively. These wavelengths are consistent with a conduction band offset to bandgap ratio of approximately 0.32. Facet coupled illumination responsivity and detectivity are reported for each composition.

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EP - 232

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Photodetectors: Materials and Devices V

Y2 - 25 January 2000 through 28 January 2000

ER -

Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications

Abstract

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