Growth and properties of epitaxial PtMn/NiFe bilayers on Si (001) substrate containing directly deposited ordered PtMn

Young Suk Choi*, Amanda K. Petford-Long, Roger C C Ward

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Equiatomic PtMn layers have been grown epitaxially on Si (001), with the face-centered tetragonal L10-ordered antiferromagnetic phase forming without post-growth magnetic field annealing. The thickness dependence of the exchange anisotropy field and coercivity of the NiFe ferromagnetic layer in the epitaxial PtMn/NiFe exchange-coupled bilayers showed the critical thickness of the PtMn to be 10 nm. The exchange biasing properties are stabilised above a PtMn thickness of 15 nm which is much lower than that for polycrystalline PtMn-based exchange-biased systems. The highest value of exchange-bias is observed for a NiFe ferromagnetic layer thickness of 6 nm. The temperature dependence of the magnetic properties in the range 50-400 K shows that H ex and Hc increase monotonically in a quasi-linear manner as temperature decreases. Non-saturation of the in-plane magnetisation component of the PtMn, due to the Néel axis lying normal to the interface, is suggested to be responsible for the temperature dependence.

Original languageEnglish (US)
Pages (from-to)186-191
Number of pages6
JournalThin Solid Films
Volume489
Issue number1-2
DOIs
StatePublished - Oct 1 2005

Keywords

  • Epitaxy
  • Exchange biasing
  • PtMn/NiFe
  • Spontaneous growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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