Growth and properties of InAsP alloys prepared by organometallic vapor phase epitaxy

K. H. Huang*, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

InAsxP1-x with x ranging form 0 to 0.60 has been heteroepitaxially deposited on InP. Organometallic vapor phase epitaxy was carried out in a horizontal, atmospheric pressure reactor using the reactants trimethyl indium, phosphine and arsine. Layers were characterized by X-ray diffraction, Hall and photoluminescence (PL) measurements. Photoluminescence was measured for the epitaxial layers at 20 K. PL spectral half widths of 12-15 meV were observed indicating that homogeneous layers were deposited. The net donor concentration for phosphorus-rich alloys was in the 1015 cm-3 range with Hall mobilities as high as 5000 cm2/V·s being observed at 295 K.

Original languageEnglish (US)
Pages (from-to)547-552
Number of pages6
JournalJournal of Crystal Growth
Volume92
Issue number3-4
DOIs
StatePublished - Oct 2 1988

ASJC Scopus subject areas

  • Condensed Matter Physics

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