Abstract
InAsxP1-x with x ranging form 0 to 0.60 has been heteroepitaxially deposited on InP. Organometallic vapor phase epitaxy was carried out in a horizontal, atmospheric pressure reactor using the reactants trimethyl indium, phosphine and arsine. Layers were characterized by X-ray diffraction, Hall and photoluminescence (PL) measurements. Photoluminescence was measured for the epitaxial layers at 20 K. PL spectral half widths of 12-15 meV were observed indicating that homogeneous layers were deposited. The net donor concentration for phosphorus-rich alloys was in the 1015 cm-3 range with Hall mobilities as high as 5000 cm2/V·s being observed at 295 K.
Original language | English (US) |
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Pages (from-to) | 547-552 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 92 |
Issue number | 3-4 |
DOIs | |
State | Published - Oct 2 1988 |
Funding
and DMR 87-801167. Extensive use of the central facilities of the Materials Research Center supported in part by NSF grant DMR 85-20280 is acknowledged.
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry