InAsxP1-x with x ranging form 0 to 0.60 has been heteroepitaxially deposited on InP. Organometallic vapor phase epitaxy was carried out in a horizontal, atmospheric pressure reactor using the reactants trimethyl indium, phosphine and arsine. Layers were characterized by X-ray diffraction, Hall and photoluminescence (PL) measurements. Photoluminescence was measured for the epitaxial layers at 20 K. PL spectral half widths of 12-15 meV were observed indicating that homogeneous layers were deposited. The net donor concentration for phosphorus-rich alloys was in the 1015 cm-3 range with Hall mobilities as high as 5000 cm2/V·s being observed at 295 K.
ASJC Scopus subject areas
- Condensed Matter Physics