Growth and properties of Sr2CuO2(CO3) thin films prepared from metal-organic chemical vapor deposition-derived precursor films

K. W. Chang, B. W. Wessels*, D. B. Studebaker, T. J. Marks, J. L. Schindler, C. R. Kannewurf, M. Aprili, L. Greene

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Cuprate oxycarbonate Sr2CuO2(CO3) thin films have been obtained from the "parent" infinite-layer compound thin films by thermal annealing at 700°C in air. The precursor infinite-layer compound thin films were grown by metal-organic chemical vapor deposition. The effect of oxygen annealing on electronic properties of these films and the attempt of converting the Ca substituted Sr0.9Ca0.1CuO2 thin film by annealing in ordinary air are reported. The as-converted Sr2CuO2(CO3) films are p-type semiconductors with a hole density of 1019 cm-3 and a room temperature resistivity of 0.1 Ω cm. Annealing in 1.0 atm oxygen at temperatures of 550-700°C decreases the room temperature resistivity to 0.02-0.03 Ω cm and increases the hole concentration to 1020-1021 cm-3. Metal-like behavior is observed in the transport properties, and a superconducting transition onset is observed at 30 K, with zero-resistivity obtained at 9 K.

Original languageEnglish (US)
Pages (from-to)242-248
Number of pages7
JournalPhysica C: Superconductivity and its applications
Volume291
Issue number3-4
DOIs
StatePublished - Dec 1 1997

Keywords

  • Chemical vapor deposition
  • Infinite-layer compound
  • Oxycarbonate superconducting film
  • Oxygen annealing
  • Transport properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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