Growth and properties of Sr2CuO2(CO3) thin films prepared from metal-organic chemical vapor deposition-derived precursor films

K. W. Chang; B. W. Wessels; D. B. Studebaker; T. J. Marks; J. L. Schindler; C. R. Kannewurf; M. Aprili; L. Greene

doi:10.1016/S0921-4534(97)01665-1

Growth and properties of Sr₂CuO₂(CO₃) thin films prepared from metal-organic chemical vapor deposition-derived precursor films

K. W. Chang, B. W. Wessels^*, D. B. Studebaker, T. J. Marks, J. L. Schindler, C. R. Kannewurf, M. Aprili, L. Greene

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Cuprate oxycarbonate Sr₂CuO₂(CO₃) thin films have been obtained from the "parent" infinite-layer compound thin films by thermal annealing at 700°C in air. The precursor infinite-layer compound thin films were grown by metal-organic chemical vapor deposition. The effect of oxygen annealing on electronic properties of these films and the attempt of converting the Ca substituted Sr_0.9Ca_0.1CuO₂ thin film by annealing in ordinary air are reported. The as-converted Sr₂CuO₂(CO₃) films are p-type semiconductors with a hole density of 10¹⁹ cm^-3 and a room temperature resistivity of 0.1 Ω cm. Annealing in 1.0 atm oxygen at temperatures of 550-700°C decreases the room temperature resistivity to 0.02-0.03 Ω cm and increases the hole concentration to 10²⁰-10²¹ cm^-3. Metal-like behavior is observed in the transport properties, and a superconducting transition onset is observed at 30 K, with zero-resistivity obtained at 9 K.

Original language	English (US)
Pages (from-to)	242-248
Number of pages	7
Journal	Physica C: Superconductivity and its applications
Volume	291
Issue number	3-4
DOIs	https://doi.org/10.1016/S0921-4534(97)01665-1
State	Published - Dec 1 1997

Keywords

Chemical vapor deposition
Infinite-layer compound
Oxycarbonate superconducting film
Oxygen annealing
Transport properties

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4534(97)01665-1

Cite this

Chang, K. W., Wessels, B. W., Studebaker, D. B., Marks, T. J., Schindler, J. L., Kannewurf, C. R., Aprili, M., & Greene, L. (1997). Growth and properties of Sr₂CuO₂(CO₃) thin films prepared from metal-organic chemical vapor deposition-derived precursor films. Physica C: Superconductivity and its applications, 291(3-4), 242-248. https://doi.org/10.1016/S0921-4534(97)01665-1

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title = "Growth and properties of Sr2CuO2(CO3) thin films prepared from metal-organic chemical vapor deposition-derived precursor films",

abstract = "Cuprate oxycarbonate Sr2CuO2(CO3) thin films have been obtained from the {"}parent{"} infinite-layer compound thin films by thermal annealing at 700°C in air. The precursor infinite-layer compound thin films were grown by metal-organic chemical vapor deposition. The effect of oxygen annealing on electronic properties of these films and the attempt of converting the Ca substituted Sr0.9Ca0.1CuO2 thin film by annealing in ordinary air are reported. The as-converted Sr2CuO2(CO3) films are p-type semiconductors with a hole density of 1019 cm-3 and a room temperature resistivity of 0.1 Ω cm. Annealing in 1.0 atm oxygen at temperatures of 550-700°C decreases the room temperature resistivity to 0.02-0.03 Ω cm and increases the hole concentration to 1020-1021 cm-3. Metal-like behavior is observed in the transport properties, and a superconducting transition onset is observed at 30 K, with zero-resistivity obtained at 9 K.",

keywords = "Chemical vapor deposition, Infinite-layer compound, Oxycarbonate superconducting film, Oxygen annealing, Transport properties",

author = "Chang, {K. W.} and Wessels, {B. W.} and Studebaker, {D. B.} and Marks, {T. J.} and Schindler, {J. L.} and Kannewurf, {C. R.} and M. Aprili and L. Greene",

note = "Funding Information: The authors would like to thank Dr. R. Feenstra in Oak Ridge National Laboratory for helpful discussions regarding this work. This research was supported by the National Science Foundation (grant DMR 91-20000) through the Science and Technology Center for Superconductivity at both Northwestern University and the University of Illinois at Urbana-Champaign. Support for the characterization facilities was provided by the National Science Foundation through the Materials Research Center of Northwestern University (grant DMR 9120521). ",

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doi = "10.1016/S0921-4534(97)01665-1",

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T1 - Growth and properties of Sr2CuO2(CO3) thin films prepared from metal-organic chemical vapor deposition-derived precursor films

AU - Chang, K. W.

AU - Wessels, B. W.

AU - Studebaker, D. B.

AU - Marks, T. J.

AU - Schindler, J. L.

AU - Kannewurf, C. R.

AU - Aprili, M.

AU - Greene, L.

N1 - Funding Information: The authors would like to thank Dr. R. Feenstra in Oak Ridge National Laboratory for helpful discussions regarding this work. This research was supported by the National Science Foundation (grant DMR 91-20000) through the Science and Technology Center for Superconductivity at both Northwestern University and the University of Illinois at Urbana-Champaign. Support for the characterization facilities was provided by the National Science Foundation through the Materials Research Center of Northwestern University (grant DMR 9120521).

PY - 1997/12/1

Y1 - 1997/12/1

N2 - Cuprate oxycarbonate Sr2CuO2(CO3) thin films have been obtained from the "parent" infinite-layer compound thin films by thermal annealing at 700°C in air. The precursor infinite-layer compound thin films were grown by metal-organic chemical vapor deposition. The effect of oxygen annealing on electronic properties of these films and the attempt of converting the Ca substituted Sr0.9Ca0.1CuO2 thin film by annealing in ordinary air are reported. The as-converted Sr2CuO2(CO3) films are p-type semiconductors with a hole density of 1019 cm-3 and a room temperature resistivity of 0.1 Ω cm. Annealing in 1.0 atm oxygen at temperatures of 550-700°C decreases the room temperature resistivity to 0.02-0.03 Ω cm and increases the hole concentration to 1020-1021 cm-3. Metal-like behavior is observed in the transport properties, and a superconducting transition onset is observed at 30 K, with zero-resistivity obtained at 9 K.

AB - Cuprate oxycarbonate Sr2CuO2(CO3) thin films have been obtained from the "parent" infinite-layer compound thin films by thermal annealing at 700°C in air. The precursor infinite-layer compound thin films were grown by metal-organic chemical vapor deposition. The effect of oxygen annealing on electronic properties of these films and the attempt of converting the Ca substituted Sr0.9Ca0.1CuO2 thin film by annealing in ordinary air are reported. The as-converted Sr2CuO2(CO3) films are p-type semiconductors with a hole density of 1019 cm-3 and a room temperature resistivity of 0.1 Ω cm. Annealing in 1.0 atm oxygen at temperatures of 550-700°C decreases the room temperature resistivity to 0.02-0.03 Ω cm and increases the hole concentration to 1020-1021 cm-3. Metal-like behavior is observed in the transport properties, and a superconducting transition onset is observed at 30 K, with zero-resistivity obtained at 9 K.

KW - Chemical vapor deposition

KW - Infinite-layer compound

KW - Oxycarbonate superconducting film

KW - Oxygen annealing

KW - Transport properties

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