Abstract
The growth and structural characteristics of three semiconductor-semimetal superlattices are presented. The superlattices were prepared by thermal evaporation in high vacuum. Although the constituents in each system have different crystal structures, only a small lattice mismatch (<1%) exists between the cubic (111) and hexagonal (003) matching planes in the CdTe-Bi and PbTe-Bi systems and the cubic (020) and hexagonal (102) planes of the SnTe-Sb system. Therefore, these systems are expected to have a coherent structure. Using mica substrates, it was found that the degree of epitaxy was very sensitive to such growth parameters as the growth temperature, deposition rate and the presence of predeposition layers. The dependence of the growth morphology on these parameters will be discussed together with results on the structural properties.
Original language | English (US) |
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Pages (from-to) | 452-456 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 70 |
Issue number | 1-2 |
DOIs | |
State | Published - Dec 1984 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry