Growth and structural characteristics of semiconductor-semimetal superlattices: CdTe-Bi, PbTe-Bi, SnTe-Sb

A. DiVenere*, Sung C. Shin, B. Y. Jin, G. K. Wong, J. B. Ketterson, J. E. Hilliard

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The growth and structural characteristics of three semiconductor-semimetal superlattices are presented. The superlattices were prepared by thermal evaporation in high vacuum. Although the constituents in each system have different crystal structures, only a small lattice mismatch (<1%) exists between the cubic (111) and hexagonal (003) matching planes in the CdTe-Bi and PbTe-Bi systems and the cubic (020) and hexagonal (102) planes of the SnTe-Sb system. Therefore, these systems are expected to have a coherent structure. Using mica substrates, it was found that the degree of epitaxy was very sensitive to such growth parameters as the growth temperature, deposition rate and the presence of predeposition layers. The dependence of the growth morphology on these parameters will be discussed together with results on the structural properties.

Original languageEnglish (US)
Pages (from-to)452-456
Number of pages5
JournalJournal of Crystal Growth
Volume70
Issue number1-2
DOIs
StatePublished - Dec 1984

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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