We report that the layered structure of Bi2Te3-based materials can be prepared with layer-by-layer growth using MBE; i.e., we sequentially deposit Te and Bi monolayers according to the sequence of Bi2Te3. The sequence of the layered structure is Te-Bi-Te-Bi-Te and three such sequences make a unit cell with a total of 6 Bi layers and 9 Te layers. In bulk and thin film (BiSb)2Te3 prepared by co-deposition, Bi and Sb occupy lattice sites randomly. In order to engineer the electronic band structure to achieve better thermoelectric properties and/or reduce the lattice thermal conductivity by increasing phonon scattering at interfaces, we have prepared artificially ordered (BiSb)2Te3. We will discuss the growth and thermoelectric properties of artificially layered (BiSb)2Te3 thin films and compare their properties with conventional structures.
|Original language||English (US)|
|Number of pages||4|
|Journal||International Conference on Thermoelectrics, ICT, Proceedings|
|State||Published - Dec 1 1999|
|Event||18th International Conference on Thermoelectrics (ICT'99) - Baltimore, MD, USA|
Duration: Aug 29 1999 → Sep 2 1999
ASJC Scopus subject areas