Growth and thermoelectric properties of artificially layered (BiSb)2Te3

Sunglae Cho; Yunki Kim; Antonio DiVenere; George K. Wong; John B. Ketterson; Jerry R. Meyer

Growth and thermoelectric properties of artificially layered (BiSb)₂Te₃

Sunglae Cho^*, Yunki Kim, Antonio DiVenere, George K. Wong, John B. Ketterson, Jerry R. Meyer

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report that the layered structure of Bi₂Te₃-based materials can be prepared with layer-by-layer growth using MBE; i.e., we sequentially deposit Te and Bi monolayers according to the sequence of Bi₂Te₃. The sequence of the layered structure is Te-Bi-Te-Bi-Te and three such sequences make a unit cell with a total of 6 Bi layers and 9 Te layers. In bulk and thin film (BiSb)₂Te₃ prepared by co-deposition, Bi and Sb occupy lattice sites randomly. In order to engineer the electronic band structure to achieve better thermoelectric properties and/or reduce the lattice thermal conductivity by increasing phonon scattering at interfaces, we have prepared artificially ordered (BiSb)₂Te₃. We will discuss the growth and thermoelectric properties of artificially layered (BiSb)₂Te₃ thin films and compare their properties with conventional structures.

Original language	English (US)
Pages (from-to)	222-225
Number of pages	4
Journal	International Conference on Thermoelectrics, ICT, Proceedings
State	Published - 1999
Event	18th International Conference on Thermoelectrics (ICT'99) - Baltimore, MD, USA Duration: Aug 29 1999 → Sep 2 1999

ASJC Scopus subject areas

General Engineering

Cite this

@article{6f9eab2e9dca4c83b8fadad4970e87ce,

title = "Growth and thermoelectric properties of artificially layered (BiSb)2Te3",

abstract = "We report that the layered structure of Bi2Te3-based materials can be prepared with layer-by-layer growth using MBE; i.e., we sequentially deposit Te and Bi monolayers according to the sequence of Bi2Te3. The sequence of the layered structure is Te-Bi-Te-Bi-Te and three such sequences make a unit cell with a total of 6 Bi layers and 9 Te layers. In bulk and thin film (BiSb)2Te3 prepared by co-deposition, Bi and Sb occupy lattice sites randomly. In order to engineer the electronic band structure to achieve better thermoelectric properties and/or reduce the lattice thermal conductivity by increasing phonon scattering at interfaces, we have prepared artificially ordered (BiSb)2Te3. We will discuss the growth and thermoelectric properties of artificially layered (BiSb)2Te3 thin films and compare their properties with conventional structures.",

author = "Sunglae Cho and Yunki Kim and Antonio DiVenere and Wong, {George K.} and Ketterson, {John B.} and Meyer, {Jerry R.}",

year = "1999",

language = "English (US)",

pages = "222--225",

journal = "International Conference on Thermoelectrics, ICT, Proceedings",

issn = "1094-2734",

note = "18th International Conference on Thermoelectrics (ICT'99) ; Conference date: 29-08-1999 Through 02-09-1999",

}

TY - JOUR

T1 - Growth and thermoelectric properties of artificially layered (BiSb)2Te3

AU - Cho, Sunglae

AU - Kim, Yunki

AU - DiVenere, Antonio

AU - Wong, George K.

AU - Ketterson, John B.

AU - Meyer, Jerry R.

PY - 1999

Y1 - 1999

N2 - We report that the layered structure of Bi2Te3-based materials can be prepared with layer-by-layer growth using MBE; i.e., we sequentially deposit Te and Bi monolayers according to the sequence of Bi2Te3. The sequence of the layered structure is Te-Bi-Te-Bi-Te and three such sequences make a unit cell with a total of 6 Bi layers and 9 Te layers. In bulk and thin film (BiSb)2Te3 prepared by co-deposition, Bi and Sb occupy lattice sites randomly. In order to engineer the electronic band structure to achieve better thermoelectric properties and/or reduce the lattice thermal conductivity by increasing phonon scattering at interfaces, we have prepared artificially ordered (BiSb)2Te3. We will discuss the growth and thermoelectric properties of artificially layered (BiSb)2Te3 thin films and compare their properties with conventional structures.

AB - We report that the layered structure of Bi2Te3-based materials can be prepared with layer-by-layer growth using MBE; i.e., we sequentially deposit Te and Bi monolayers according to the sequence of Bi2Te3. The sequence of the layered structure is Te-Bi-Te-Bi-Te and three such sequences make a unit cell with a total of 6 Bi layers and 9 Te layers. In bulk and thin film (BiSb)2Te3 prepared by co-deposition, Bi and Sb occupy lattice sites randomly. In order to engineer the electronic band structure to achieve better thermoelectric properties and/or reduce the lattice thermal conductivity by increasing phonon scattering at interfaces, we have prepared artificially ordered (BiSb)2Te3. We will discuss the growth and thermoelectric properties of artificially layered (BiSb)2Te3 thin films and compare their properties with conventional structures.

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M3 - Conference article

AN - SCOPUS:0033299680

SN - 1094-2734

SP - 222

EP - 225

JO - International Conference on Thermoelectrics, ICT, Proceedings

JF - International Conference on Thermoelectrics, ICT, Proceedings

T2 - 18th International Conference on Thermoelectrics (ICT'99)

Y2 - 29 August 1999 through 2 September 1999

ER -

Growth and thermoelectric properties of artificially layered (BiSb)₂Te₃

Abstract

ASJC Scopus subject areas

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