Growth and transport properties of complementary germanium nanowire field-effect transistors

Andrew B. Greytak*, Lincoln J. Lauhon, Mark S. Gudiksen, Charles M. Lieber

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

337 Scopus citations

Abstract

The synthesis of p- and n-type Ge nanowires and the fabrication of Ge nanowire p- and n-field-effect transistors (FET) was described. The nanowires were synthesized by a multistep process and the axial elongation and doping were accomplished in separate chemical vapor deposition steps. The Ge nanowires prepared by Au nanocluster-mediated vapor-liquid-solid (VLS) growth were surface-doped in situ using diborane or phosphine. The results show that the field-effect transistors prepared from these Ge nanowires exhibit on currents and transconductances up to 850 μA/μm and 4.9 μA/V.

Original languageEnglish (US)
Pages (from-to)4176-4178
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number21
DOIs
StatePublished - May 24 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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