Growth and transport properties of complementary germanium nanowire field-effect transistors

The synthesis of p- and n-type Ge nanowires and the fabrication of Ge nanowire p- and n-field-effect transistors (FET) was described. The nanowires were synthesized by a multistep process and the axial elongation and doping were accomplished in separate chemical vapor deposition steps. The Ge nanowires prepared by Au nanocluster-mediated vapor-liquid-solid (VLS) growth were surface-doped in situ using diborane or phosphine. The results show that the field-effect transistors prepared from these Ge nanowires exhibit on currents and transconductances up to 850 μA/μm and 4.9 μA/V.