Growth kinetics of ZnO prepared by organometallic chemical vapor deposition

P. Souletie, B. W. Wessels

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

Zinc oxide films were deposited using the reactants dimethyl zinc and tetrahydrofuran. Growth kinetics were determined from the dependence of the growth rate on substrate temperature and reactant partial pressure. A complex temperature dependence was observed over the temperature range of 300–500 °C, For a deposition temperature of 400 °C, the growth kinetics were modeled using a bimolecular surface reaction rate-limited mechanism. The layers were characterized using x-ray diffractometer and Auger spectroscopy measurements.

Original languageEnglish (US)
Pages (from-to)740-744
Number of pages5
JournalJournal of Materials Research
Volume3
Issue number4
DOIs
StatePublished - Sep 1988

Funding

Materials Research Center at Northwestern University ,. , , , XT . , „ . „ , sponsored in part by the the National Science Foundation under Grant No. DMR 8520280 were used throughout this project. This work was supported by the Department of Energy Office of Basic Energy Sciences under Contract No. DE-FG02-85ER45209. The central facilities of the

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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