Growth kinetics of ZnO prepared by organometallic chemical vapor deposition

P. Souletie; B. W. Wessels

doi:10.1557/JMR.1988.0740

Growth kinetics of ZnO prepared by organometallic chemical vapor deposition

P. Souletie, B. W. Wessels

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Zinc oxide films were deposited using the reactants dimethyl zinc and tetrahydrofuran. Growth kinetics were determined from the dependence of the growth rate on substrate temperature and reactant partial pressure. A complex temperature dependence was observed over the temperature range of 300–500 °C, For a deposition temperature of 400 °C, the growth kinetics were modeled using a bimolecular surface reaction rate-limited mechanism. The layers were characterized using x-ray diffractometer and Auger spectroscopy measurements.

Original language	English (US)
Pages (from-to)	740-744
Number of pages	5
Journal	Journal of Materials Research
Volume	3
Issue number	4
DOIs	https://doi.org/10.1557/JMR.1988.0740
State	Published - Sep 1988

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/JMR.1988.0740

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title = "Growth kinetics of ZnO prepared by organometallic chemical vapor deposition",

abstract = "Zinc oxide films were deposited using the reactants dimethyl zinc and tetrahydrofuran. Growth kinetics were determined from the dependence of the growth rate on substrate temperature and reactant partial pressure. A complex temperature dependence was observed over the temperature range of 300–500 °C, For a deposition temperature of 400 °C, the growth kinetics were modeled using a bimolecular surface reaction rate-limited mechanism. The layers were characterized using x-ray diffractometer and Auger spectroscopy measurements.",

author = "P. Souletie and Wessels, {B. W.}",

note = "Funding Information: Materials Research Center at Northwestern University ,. , , , XT . , „ . „ , sponsored in part by the the National Science Foundation under Grant No. DMR 8520280 were used throughout this project. Funding Information: This work was supported by the Department of Energy Office of Basic Energy Sciences under Contract No. DE-FG02-85ER45209. The central facilities of the",

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AU - Wessels, B. W.

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PY - 1988/9

Y1 - 1988/9

N2 - Zinc oxide films were deposited using the reactants dimethyl zinc and tetrahydrofuran. Growth kinetics were determined from the dependence of the growth rate on substrate temperature and reactant partial pressure. A complex temperature dependence was observed over the temperature range of 300–500 °C, For a deposition temperature of 400 °C, the growth kinetics were modeled using a bimolecular surface reaction rate-limited mechanism. The layers were characterized using x-ray diffractometer and Auger spectroscopy measurements.

AB - Zinc oxide films were deposited using the reactants dimethyl zinc and tetrahydrofuran. Growth kinetics were determined from the dependence of the growth rate on substrate temperature and reactant partial pressure. A complex temperature dependence was observed over the temperature range of 300–500 °C, For a deposition temperature of 400 °C, the growth kinetics were modeled using a bimolecular surface reaction rate-limited mechanism. The layers were characterized using x-ray diffractometer and Auger spectroscopy measurements.

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Growth kinetics of ZnO prepared by organometallic chemical vapor deposition

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