Abstract
Zinc oxide films were deposited using the reactants dimethyl zinc and tetrahydrofuran. Growth kinetics were determined from the dependence of the growth rate on substrate temperature and reactant partial pressure. A complex temperature dependence was observed over the temperature range of 300–500 °C, For a deposition temperature of 400 °C, the growth kinetics were modeled using a bimolecular surface reaction rate-limited mechanism. The layers were characterized using x-ray diffractometer and Auger spectroscopy measurements.
Original language | English (US) |
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Pages (from-to) | 740-744 |
Number of pages | 5 |
Journal | Journal of Materials Research |
Volume | 3 |
Issue number | 4 |
DOIs | |
State | Published - Sep 1988 |
Funding
Materials Research Center at Northwestern University ,. , , , XT . , „ . „ , sponsored in part by the the National Science Foundation under Grant No. DMR 8520280 were used throughout this project. This work was supported by the Department of Energy Office of Basic Energy Sciences under Contract No. DE-FG02-85ER45209. The central facilities of the
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering