Growth kinetics of ZnO prepared by organometallic chemical vapor deposition

P. Souletie, B. W. Wessels

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


Zinc oxide films were deposited using the reactants dimethyl zinc and tetrahydrofuran. Growth kinetics were determined from the dependence of the growth rate on substrate temperature and reactant partial pressure. A complex temperature dependence was observed over the temperature range of 300–500 °C, For a deposition temperature of 400 °C, the growth kinetics were modeled using a bimolecular surface reaction rate-limited mechanism. The layers were characterized using x-ray diffractometer and Auger spectroscopy measurements.

Original languageEnglish (US)
Pages (from-to)740-744
Number of pages5
JournalJournal of Materials Research
Issue number4
StatePublished - Sep 1988

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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