Growth-mode modification of Bi on using Te monolayer deposition

Sunglae Cho, Antonio DiVenere, George K. Wong, John B. Ketterson, Jerry R. Meyer

Research output: Contribution to journalArticlepeer-review

27 Scopus citations


Bi deposited on the (Formula presented) (Cd-terminated) surface grows by three-dimensional (3D) islanding, while Bi deposited on the (Formula presented) (Te-terminated) grows layer-by-layer. However, introducing a Te monolayer (ML) on the (Formula presented) surface reduces the interfacial energy, thereby changing the growth mode of Bi from 3D islandlike to layer-by-layer growth. The Te ML remains where it is deposited, which differs from the growth mode in which the surface-active agent floats on the growing surface. By incorporating appropriate Te ML’s, Bi/CdTe superlattices with sharper interfaces were observed. These superlattices were characterized by x-ray diffraction and transmission electron microscopy.

Original languageEnglish (US)
Pages (from-to)2324-2328
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number4
StatePublished - 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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