Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates

Hitoshi Ohsato; Manijeh Razeghi

Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates

Hitoshi Ohsato^*, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

We have been presented crystallographic growth models of GaN thin films on the α-Al₂O₃ substrates based on the crystal chemistry: electronegativity, chemical bonds, Pouling's rules in the background of mineralogy. We have introduced an extended atomic distance mismatch in crystal growth models and reported epitaxial growth models and reported epitaxial growth model with edge-type dislocation and bridge-type model growing with some roots contacting with substrates. In this paper, we presented growth models of GaN on Si substrates for an example of crystallographic growth model of thin film and discussed the growth conditions of different hexagonal and cubic phases. Crystal chemistry should have been performed effectively on the same aspects of epitaxial growth.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Gail J. Brown, Manijeh Razeghi
Publisher	Society of Photo-Optical Instrumentation Engineers
Pages	288-297
Number of pages	10
Volume	2999
ISBN (Print)	0819424102
State	Published - Dec 1 1997
Event	Photodetectors: Materials and Devices II - San Jose, CA, USA Duration: Feb 12 1997 → Feb 14 1997

Other

Other	Photodetectors: Materials and Devices II
City	San Jose, CA, USA
Period	2/12/97 → 2/14/97

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

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title = "Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates",

abstract = "We have been presented crystallographic growth models of GaN thin films on the α-Al2O3 substrates based on the crystal chemistry: electronegativity, chemical bonds, Pouling's rules in the background of mineralogy. We have introduced an extended atomic distance mismatch in crystal growth models and reported epitaxial growth models and reported epitaxial growth model with edge-type dislocation and bridge-type model growing with some roots contacting with substrates. In this paper, we presented growth models of GaN on Si substrates for an example of crystallographic growth model of thin film and discussed the growth conditions of different hexagonal and cubic phases. Crystal chemistry should have been performed effectively on the same aspects of epitaxial growth.",

author = "Hitoshi Ohsato and Manijeh Razeghi",

year = "1997",

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language = "English (US)",

isbn = "0819424102",

volume = "2999",

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booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Society of Photo-Optical Instrumentation Engineers",

note = "Photodetectors: Materials and Devices II ; Conference date: 12-02-1997 Through 14-02-1997",

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Ohsato, H & Razeghi, M 1997, Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates. in GJ Brown & M Razeghi (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 2999, Society of Photo-Optical Instrumentation Engineers, pp. 288-297, Photodetectors: Materials and Devices II, San Jose, CA, USA, 2/12/97.

Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates. / Ohsato, Hitoshi; Razeghi, Manijeh.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Gail J. Brown; Manijeh Razeghi. Vol. 2999 Society of Photo-Optical Instrumentation Engineers, 1997. p. 288-297.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Growth models of GaN thin films based on crystal chemistry

T2 - Photodetectors: Materials and Devices II

AU - Ohsato, Hitoshi

AU - Razeghi, Manijeh

PY - 1997/12/1

Y1 - 1997/12/1

N2 - We have been presented crystallographic growth models of GaN thin films on the α-Al2O3 substrates based on the crystal chemistry: electronegativity, chemical bonds, Pouling's rules in the background of mineralogy. We have introduced an extended atomic distance mismatch in crystal growth models and reported epitaxial growth models and reported epitaxial growth model with edge-type dislocation and bridge-type model growing with some roots contacting with substrates. In this paper, we presented growth models of GaN on Si substrates for an example of crystallographic growth model of thin film and discussed the growth conditions of different hexagonal and cubic phases. Crystal chemistry should have been performed effectively on the same aspects of epitaxial growth.

AB - We have been presented crystallographic growth models of GaN thin films on the α-Al2O3 substrates based on the crystal chemistry: electronegativity, chemical bonds, Pouling's rules in the background of mineralogy. We have introduced an extended atomic distance mismatch in crystal growth models and reported epitaxial growth models and reported epitaxial growth model with edge-type dislocation and bridge-type model growing with some roots contacting with substrates. In this paper, we presented growth models of GaN on Si substrates for an example of crystallographic growth model of thin film and discussed the growth conditions of different hexagonal and cubic phases. Crystal chemistry should have been performed effectively on the same aspects of epitaxial growth.

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M3 - Conference contribution

AN - SCOPUS:0031353159

SN - 0819424102

VL - 2999

SP - 288

EP - 297

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Brown, Gail J.

A2 - Razeghi, Manijeh

PB - Society of Photo-Optical Instrumentation Engineers

Y2 - 12 February 1997 through 14 February 1997

ER -

Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates

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