Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates

Hitoshi Ohsato*, Manijeh Razeghi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We have been presented crystallographic growth models of GaN thin films on the α-Al2O3 substrates based on the crystal chemistry: electronegativity, chemical bonds, Pouling's rules in the background of mineralogy. We have introduced an extended atomic distance mismatch in crystal growth models and reported epitaxial growth models and reported epitaxial growth model with edge-type dislocation and bridge-type model growing with some roots contacting with substrates. In this paper, we presented growth models of GaN on Si substrates for an example of crystallographic growth model of thin film and discussed the growth conditions of different hexagonal and cubic phases. Crystal chemistry should have been performed effectively on the same aspects of epitaxial growth.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsGail J. Brown, Manijeh Razeghi
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages288-297
Number of pages10
Volume2999
ISBN (Print)0819424102
StatePublished - Dec 1 1997
EventPhotodetectors: Materials and Devices II - San Jose, CA, USA
Duration: Feb 12 1997Feb 14 1997

Other

OtherPhotodetectors: Materials and Devices II
CitySan Jose, CA, USA
Period2/12/972/14/97

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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