Abstract
AlxGa1-xN were grown on (00.1) sapphire and (111) silicon substrates in the whole composition range (0≤x≤1). The high optical quality of the epilayers was assessed by room-temperature optical absorption and photoluminescence measurements. Layers with higher Al composition are more resistive. Resistive AlxGa1-xN epilayers were successfully doped with Ge and free-electron concentration as high as 3×1019cm-3 was achieved.
Original language | English (US) |
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Pages (from-to) | 1745 |
Number of pages | 1 |
Journal | Applied Physics Letters |
Volume | 67 |
DOIs | |
State | Published - 1995 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)