Growth of AlxGa1-xN:Ge on sapphire and silicon substrates

X. Zhang; P. Kung; A. Saxler; D. Walker; T. C. Wang; M. Razeghi

doi:10.1063/1.115036

Growth of Al_xGa_1-xN:Ge on sapphire and silicon substrates

X. Zhang^*, P. Kung, A. Saxler, D. Walker, T. C. Wang, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

Al_xGa_1-xN were grown on (00.1) sapphire and (111) silicon substrates in the whole composition range (0≤x≤1). The high optical quality of the epilayers was assessed by room-temperature optical absorption and photoluminescence measurements. Layers with higher Al composition are more resistive. Resistive Al_xGa_1-xN epilayers were successfully doped with Ge and free-electron concentration as high as 3×10¹⁹cm^-3 was achieved.

Original language	English (US)
Pages (from-to)	1745
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.115036
State	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Growth of AlxGa1-xN:Ge on sapphire and silicon substrates",

abstract = "AlxGa1-xN were grown on (00.1) sapphire and (111) silicon substrates in the whole composition range (0≤x≤1). The high optical quality of the epilayers was assessed by room-temperature optical absorption and photoluminescence measurements. Layers with higher Al composition are more resistive. Resistive AlxGa1-xN epilayers were successfully doped with Ge and free-electron concentration as high as 3×1019cm-3 was achieved.",

author = "X. Zhang and P. Kung and A. Saxler and D. Walker and Wang, \{T. C.\} and M. Razeghi",

year = "1995",

doi = "10.1063/1.115036",

language = "English (US)",

volume = "67",

pages = "1745",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Growth of AlxGa1-xN:Ge on sapphire and silicon substrates

AU - Zhang, X.

AU - Kung, P.

AU - Saxler, A.

AU - Walker, D.

AU - Wang, T. C.

AU - Razeghi, M.

PY - 1995

Y1 - 1995

N2 - AlxGa1-xN were grown on (00.1) sapphire and (111) silicon substrates in the whole composition range (0≤x≤1). The high optical quality of the epilayers was assessed by room-temperature optical absorption and photoluminescence measurements. Layers with higher Al composition are more resistive. Resistive AlxGa1-xN epilayers were successfully doped with Ge and free-electron concentration as high as 3×1019cm-3 was achieved.

AB - AlxGa1-xN were grown on (00.1) sapphire and (111) silicon substrates in the whole composition range (0≤x≤1). The high optical quality of the epilayers was assessed by room-temperature optical absorption and photoluminescence measurements. Layers with higher Al composition are more resistive. Resistive AlxGa1-xN epilayers were successfully doped with Ge and free-electron concentration as high as 3×1019cm-3 was achieved.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029373785&partnerID=8YFLogxK

U2 - 10.1063/1.115036

DO - 10.1063/1.115036

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SN - 0003-6951

VL - 67

SP - 1745

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Growth of Al_xGa_1-xN:Ge on sapphire and silicon substrates

Abstract

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