Growth of AlxGa1-xN:Ge on sapphire and silicon substrates

X. Zhang*, P. Kung, A. Saxler, D. Walker, T. C. Wang, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

83 Scopus citations

Abstract

AlxGa1-xN were grown on (00.1) sapphire and (111) silicon substrates in the whole composition range (0≤x≤1). The high optical quality of the epilayers was assessed by room-temperature optical absorption and photoluminescence measurements. Layers with higher Al composition are more resistive. Resistive AlxGa1-xN epilayers were successfully doped with Ge and free-electron concentration as high as 3×1019cm-3 was achieved.

Original languageEnglish (US)
Pages (from-to)1745
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - 1995

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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