AlxGa1-xN were grown on (00.1) sapphire and (111) silicon substrates in the whole composition range (0≤x≤1). The high optical quality of the epilayers was assessed by room-temperature optical absorption and photoluminescence measurements. Layers with higher Al composition are more resistive. Resistive AlxGa1-xN epilayers were successfully doped with Ge and free-electron concentration as high as 3×1019cm-3 was achieved.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)