Growth of deep UV light emitting diodes by metalorganic chemical vapor deposition

Alireza Yasan, Ryan McClintock, Kathryn Mayes, Derek Shiell, Shaban Ramezani Darvish, Patrick Kung, Manijeh Razeghi

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

We demonstrate high power AlGaN based ultraviolet light-emitting diodes (UV LEDs) with an emission wavelength of 280 nm using an asymmetric single quantum well active layer configuration on top of a high-quality AlGaN/AlN template layer grown by metalorganic chemical vapor deposition (MOCVD). An output power of 1.8 mW at a pulsed current of 400 mA was achieved for a single 300 μm × 300 μm diode. This device reached a high peak external quantum efficiency of 0.24% at 40 mA. An array of four diodes produced 6.5 mW at 880 mA of pulsed current. We also demonstrate high output power operation of AlGaN-based UV LEDs at a short wavelength of 265 nm. An output power of 2.4 mW at a pulsed current of 360 mA was achieved for a single diode. A packaged array of four diodes produced 5.3 mW at 700 mA of pulsed current. The DC output power is 170 μW at 250 mA.

Original languageEnglish (US)
Pages (from-to)400-414
Number of pages15
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5359
DOIs
StatePublished - Sep 13 2004
EventQuantum Sensing and Nanophotonic Devices - San Jose, CA, United States
Duration: Jan 25 2004Jan 29 2004

Keywords

  • AlGaN
  • Co-doping
  • Light-emitting diode
  • MOCVD
  • Ultraviolet

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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