Growth of GaInAs-InP multiquantum wells on garnet (GGG=Gd 3Ga5O12) substrate by metalorganic chemical vapor deposition

M. Razeghi*, P. L. Meunier, P. Maurel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

Ga0.47In0.53As-InP multiquantum wells grown by low-pressure metalorganic chemical vapor deposition on garnet (GGG=Gd 3Ga5O12 with a=12.383 Å) substrates are presented for the first time. The x-ray diffraction pattern shows that the orientation of the epitaxial layer is (111) while the underlying substrate orientation is (100). The photoluminescence at 77 K is due to the GaInAs layers.

Original languageEnglish (US)
Pages (from-to)2261-2263
Number of pages3
JournalJournal of Applied Physics
Volume59
Issue number6
DOIs
StatePublished - 1986

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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