Growth of GaInAs-InP multiquantum wells on garnet (GGG=Gd 3Ga5O12) substrate by metalorganic chemical vapor deposition

M. Razeghi; P. L. Meunier; P. Maurel

doi:10.1063/1.336374

Growth of GaInAs-InP multiquantum wells on garnet (GGG=Gd ₃Ga₅O₁₂) substrate by metalorganic chemical vapor deposition

M. Razeghi^*, P. L. Meunier, P. Maurel

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Ga_0.47In_0.53As-InP multiquantum wells grown by low-pressure metalorganic chemical vapor deposition on garnet (GGG=Gd ₃Ga₅O₁₂ with a=12.383 Å) substrates are presented for the first time. The x-ray diffraction pattern shows that the orientation of the epitaxial layer is (111) while the underlying substrate orientation is (100). The photoluminescence at 77 K is due to the GaInAs layers.

Original language	English (US)
Pages (from-to)	2261-2263
Number of pages	3
Journal	Journal of Applied Physics
Volume	59
Issue number	6
DOIs	https://doi.org/10.1063/1.336374
State	Published - 1986

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Growth of GaInAs-InP multiquantum wells on garnet (GGG=Gd 3Ga5O12) substrate by metalorganic chemical vapor deposition",

abstract = "Ga0.47In0.53As-InP multiquantum wells grown by low-pressure metalorganic chemical vapor deposition on garnet (GGG=Gd 3Ga5O12 with a=12.383 {\AA}) substrates are presented for the first time. The x-ray diffraction pattern shows that the orientation of the epitaxial layer is (111) while the underlying substrate orientation is (100). The photoluminescence at 77 K is due to the GaInAs layers.",

author = "M. Razeghi and Meunier, {P. L.} and P. Maurel",

year = "1986",

doi = "10.1063/1.336374",

language = "English (US)",

volume = "59",

pages = "2261--2263",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

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T1 - Growth of GaInAs-InP multiquantum wells on garnet (GGG=Gd 3Ga5O12) substrate by metalorganic chemical vapor deposition

AU - Razeghi, M.

AU - Meunier, P. L.

AU - Maurel, P.

PY - 1986

Y1 - 1986

N2 - Ga0.47In0.53As-InP multiquantum wells grown by low-pressure metalorganic chemical vapor deposition on garnet (GGG=Gd 3Ga5O12 with a=12.383 Å) substrates are presented for the first time. The x-ray diffraction pattern shows that the orientation of the epitaxial layer is (111) while the underlying substrate orientation is (100). The photoluminescence at 77 K is due to the GaInAs layers.

AB - Ga0.47In0.53As-InP multiquantum wells grown by low-pressure metalorganic chemical vapor deposition on garnet (GGG=Gd 3Ga5O12 with a=12.383 Å) substrates are presented for the first time. The x-ray diffraction pattern shows that the orientation of the epitaxial layer is (111) while the underlying substrate orientation is (100). The photoluminescence at 77 K is due to the GaInAs layers.

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U2 - 10.1063/1.336374

DO - 10.1063/1.336374

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Growth of GaInAs-InP multiquantum wells on garnet (GGG=Gd ₃Ga₅O₁₂) substrate by metalorganic chemical vapor deposition

Abstract

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