Growth of GaN without yellow luminescence

X. Zhang*, P. Kung, D. Walker, A. Saxler, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

25 Scopus citations

Abstract

We report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.

Original languageEnglish (US)
Pages (from-to)625-629
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume395
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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