Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor deposition

M. Razeghi*, J. P. Hirtz, U. O. Ziemelis, C. Delalande, B. Etienne, M. Voos

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

69 Scopus citations

Abstract

We describe the growth of multiquantum well and single quantum well Ga 0.47In0.53As-InP structures by low pressure metalorganic chemical vapor deposition. The multiwell structure consists of 25-, 50-, 100-, and 200-Å quantum wells (Ga0.47In0.53As layers) separated by 500-Å barriers (InP layers). Auger measurements indicate the presence of four distinct wells with abrupt boundaries. Photoluminescence measurements are consistent with the existence of four wells; however, deviations are noted between experimentally determined and theoretically predicted recombination energies. An analogous situation exists for the single (50 and 100 Å) quantum well structures. Possible explanations, including variation of well composition, variation of well thickness, and participation of impurities in the recombination process are suggested.

Original languageEnglish (US)
Pages (from-to)585-587
Number of pages3
JournalApplied Physics Letters
Volume43
Issue number6
DOIs
StatePublished - Dec 1 1983

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Growth of Ga<sub>0.47</sub>In<sub>0.53</sub>As-InP quantum wells by low pressure metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this