TY - JOUR
T1 - Growth of Ga0.47In0.53As-InP quantum wells by low pressure metalorganic chemical vapor deposition
AU - Razeghi, M.
AU - Hirtz, J. P.
AU - Ziemelis, U. O.
AU - Delalande, C.
AU - Etienne, B.
AU - Voos, M.
PY - 1983
Y1 - 1983
N2 - We describe the growth of multiquantum well and single quantum well Ga 0.47In0.53As-InP structures by low pressure metalorganic chemical vapor deposition. The multiwell structure consists of 25-, 50-, 100-, and 200-Å quantum wells (Ga0.47In0.53As layers) separated by 500-Å barriers (InP layers). Auger measurements indicate the presence of four distinct wells with abrupt boundaries. Photoluminescence measurements are consistent with the existence of four wells; however, deviations are noted between experimentally determined and theoretically predicted recombination energies. An analogous situation exists for the single (50 and 100 Å) quantum well structures. Possible explanations, including variation of well composition, variation of well thickness, and participation of impurities in the recombination process are suggested.
AB - We describe the growth of multiquantum well and single quantum well Ga 0.47In0.53As-InP structures by low pressure metalorganic chemical vapor deposition. The multiwell structure consists of 25-, 50-, 100-, and 200-Å quantum wells (Ga0.47In0.53As layers) separated by 500-Å barriers (InP layers). Auger measurements indicate the presence of four distinct wells with abrupt boundaries. Photoluminescence measurements are consistent with the existence of four wells; however, deviations are noted between experimentally determined and theoretically predicted recombination energies. An analogous situation exists for the single (50 and 100 Å) quantum well structures. Possible explanations, including variation of well composition, variation of well thickness, and participation of impurities in the recombination process are suggested.
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U2 - 10.1063/1.94408
DO - 10.1063/1.94408
M3 - Article
AN - SCOPUS:0342821192
SN - 0003-6951
VL - 43
SP - 585
EP - 587
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 6
ER -