Growth of graphene-like structures on an oxidized sic surface

Weijie Lu*, W. C. Mitchel, J. J. Boeckl, Tiffany R. Crenshaw, W. E. Collins, R P H Chang, L. C. Feldman

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations


Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO 2/SiC structure was annealed at 1350°C in 10 -5 Torr; the SiO 2 layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10 -5 Torr.

Original languageEnglish (US)
Pages (from-to)731-736
Number of pages6
JournalJournal of Electronic Materials
Issue number6
StatePublished - Jun 1 2009


  • Carbon nanotubes
  • Graphene growth
  • SiC
  • Surface structures

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Lu, W., Mitchel, W. C., Boeckl, J. J., Crenshaw, T. R., Collins, W. E., Chang, R. P. H., & Feldman, L. C. (2009). Growth of graphene-like structures on an oxidized sic surface. Journal of Electronic Materials, 38(6), 731-736.