Growth of high-quality epitaxial GaAs films by sputter deposition

S. A. Barnett*, G. Bajor, J. E. Greene

*Corresponding author for this work

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Epitaxial GaAs films have been grown on (100) Cr-doped GaAs substrates by sputter deposition from an undoped GaAs target. Unintentionally doped samples were high resistivity (105-106 Ω cm) n type with room temperature mobilities as high as 5000 cm2/V sec. Residual oxygen and carbon contamination was minimized through the use of a liquid-nitrogen-cooled shroud surrounding the discharge during deposition. Excess arsenic was provided to the growing film from an effusion cell. Film doping was accomplished using either an evaporated source (Mn) or the addition of a gas-phase impurity (H2S) during sputter deposition. Mn-doped p-type films were grown with room-temperature carrier concentrations between 1.3×1017 and 2.5×1018 cm-3 and corresponding hole mobilities of 240-95 cm2/V sec. The S-doped films were n-type with S concentrations, as determined by secondary-ion mass spectrometer (SIMS), up to the solid solubility limit and sharp doping profiles with widths of ∼200 Å. In all cases the dopant incorporation probability was controllable by varying the negative bias on the growing film.

Original languageEnglish (US)
Pages (from-to)734-737
Number of pages4
JournalApplied Physics Letters
Volume37
Issue number8
DOIs
StatePublished - Dec 1 1980

Fingerprint

mass spectrometers
shrouds
hole mobility
room temperature
arsenic
liquid nitrogen
contamination
solubility
vapor phases
impurities
electrical resistivity
carbon
oxygen
profiles
cells

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Barnett, S. A. ; Bajor, G. ; Greene, J. E. / Growth of high-quality epitaxial GaAs films by sputter deposition. In: Applied Physics Letters. 1980 ; Vol. 37, No. 8. pp. 734-737.
@article{ca6da997284542d783ac3871a9986e06,
title = "Growth of high-quality epitaxial GaAs films by sputter deposition",
abstract = "Epitaxial GaAs films have been grown on (100) Cr-doped GaAs substrates by sputter deposition from an undoped GaAs target. Unintentionally doped samples were high resistivity (105-106 Ω cm) n type with room temperature mobilities as high as 5000 cm2/V sec. Residual oxygen and carbon contamination was minimized through the use of a liquid-nitrogen-cooled shroud surrounding the discharge during deposition. Excess arsenic was provided to the growing film from an effusion cell. Film doping was accomplished using either an evaporated source (Mn) or the addition of a gas-phase impurity (H2S) during sputter deposition. Mn-doped p-type films were grown with room-temperature carrier concentrations between 1.3×1017 and 2.5×1018 cm-3 and corresponding hole mobilities of 240-95 cm2/V sec. The S-doped films were n-type with S concentrations, as determined by secondary-ion mass spectrometer (SIMS), up to the solid solubility limit and sharp doping profiles with widths of ∼200 {\AA}. In all cases the dopant incorporation probability was controllable by varying the negative bias on the growing film.",
author = "Barnett, {S. A.} and G. Bajor and Greene, {J. E.}",
year = "1980",
month = "12",
day = "1",
doi = "10.1063/1.92063",
language = "English (US)",
volume = "37",
pages = "734--737",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

Growth of high-quality epitaxial GaAs films by sputter deposition. / Barnett, S. A.; Bajor, G.; Greene, J. E.

In: Applied Physics Letters, Vol. 37, No. 8, 01.12.1980, p. 734-737.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth of high-quality epitaxial GaAs films by sputter deposition

AU - Barnett, S. A.

AU - Bajor, G.

AU - Greene, J. E.

PY - 1980/12/1

Y1 - 1980/12/1

N2 - Epitaxial GaAs films have been grown on (100) Cr-doped GaAs substrates by sputter deposition from an undoped GaAs target. Unintentionally doped samples were high resistivity (105-106 Ω cm) n type with room temperature mobilities as high as 5000 cm2/V sec. Residual oxygen and carbon contamination was minimized through the use of a liquid-nitrogen-cooled shroud surrounding the discharge during deposition. Excess arsenic was provided to the growing film from an effusion cell. Film doping was accomplished using either an evaporated source (Mn) or the addition of a gas-phase impurity (H2S) during sputter deposition. Mn-doped p-type films were grown with room-temperature carrier concentrations between 1.3×1017 and 2.5×1018 cm-3 and corresponding hole mobilities of 240-95 cm2/V sec. The S-doped films were n-type with S concentrations, as determined by secondary-ion mass spectrometer (SIMS), up to the solid solubility limit and sharp doping profiles with widths of ∼200 Å. In all cases the dopant incorporation probability was controllable by varying the negative bias on the growing film.

AB - Epitaxial GaAs films have been grown on (100) Cr-doped GaAs substrates by sputter deposition from an undoped GaAs target. Unintentionally doped samples were high resistivity (105-106 Ω cm) n type with room temperature mobilities as high as 5000 cm2/V sec. Residual oxygen and carbon contamination was minimized through the use of a liquid-nitrogen-cooled shroud surrounding the discharge during deposition. Excess arsenic was provided to the growing film from an effusion cell. Film doping was accomplished using either an evaporated source (Mn) or the addition of a gas-phase impurity (H2S) during sputter deposition. Mn-doped p-type films were grown with room-temperature carrier concentrations between 1.3×1017 and 2.5×1018 cm-3 and corresponding hole mobilities of 240-95 cm2/V sec. The S-doped films were n-type with S concentrations, as determined by secondary-ion mass spectrometer (SIMS), up to the solid solubility limit and sharp doping profiles with widths of ∼200 Å. In all cases the dopant incorporation probability was controllable by varying the negative bias on the growing film.

UR - http://www.scopus.com/inward/record.url?scp=36749105822&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36749105822&partnerID=8YFLogxK

U2 - 10.1063/1.92063

DO - 10.1063/1.92063

M3 - Article

VL - 37

SP - 734

EP - 737

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

ER -