Growth of InAsP/InP quantum wells by solid source MBE on misoriented and exact InP (1 1 1)B

Substrate temperature and arsenic species effects

G. Dagnall*, S. R. Stock, A. S. Brown

*Corresponding author for this work

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Two series of strained InAsP/InP multiquantum wells (MQWs) were grown by solid source molecular beam epitaxy (SSMBE) simultaneously on Fe-doped InP substrates with a growth orientation of either (1 0 0), exact (1 1 1)B, and (1 1 1)B misoriented 1° toward 〈-2 1 1〉. The MQWs were grown using either dimer or tetramer arsenic (As2 or As4) over a substrate temperature range of 420-535 °C. The θ-2θ X-ray diffraction measurements, the atomic force microscopy (AFM) images of the surfaces, and the 8 K photoluminescence (PL) full-width at half-maximum (FWHM) values of the (1 1 1)B samples showed general improvement in the samples' material properties with increasing substrate temperature. While the X-ray diffraction measurements and the AFM images showed little difference between As2 and As4, the 8 K PL FWHM values varied greatly with respect to the arsenic species used. The exact (1 1 1)B samples had narrower 8 K PL FWHM values when grown with As2. For growth on misoriented (1 1 1)B InP, the 8 K FWHM values narrowed with As4. The misoriented (1 1 1)B samples had the narrowest 8 K PL FWHM when grown with As4 at a temperature of 520 °C; the exact (1 1 1)B at 495 °C when grown with As2.

Original languageEnglish (US)
Pages (from-to)242-247
Number of pages6
JournalJournal of Crystal Growth
Volume201
DOIs
StatePublished - Jan 1 1999
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: Aug 31 1998Sep 4 1998

Fingerprint

Arsenic
Full width at half maximum
Molecular beam epitaxy
arsenic
Semiconductor quantum wells
quantum wells
Photoluminescence
Substrates
photoluminescence
Atomic force microscopy
Temperature
temperature
atomic force microscopy
X ray diffraction
diffraction
Dimers
Materials properties
x rays
molecular beam epitaxy
dimers

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

@article{e19a0854574e48ec86567e86c54b7661,
title = "Growth of InAsP/InP quantum wells by solid source MBE on misoriented and exact InP (1 1 1)B: Substrate temperature and arsenic species effects",
abstract = "Two series of strained InAsP/InP multiquantum wells (MQWs) were grown by solid source molecular beam epitaxy (SSMBE) simultaneously on Fe-doped InP substrates with a growth orientation of either (1 0 0), exact (1 1 1)B, and (1 1 1)B misoriented 1° toward 〈-2 1 1〉. The MQWs were grown using either dimer or tetramer arsenic (As2 or As4) over a substrate temperature range of 420-535 °C. The θ-2θ X-ray diffraction measurements, the atomic force microscopy (AFM) images of the surfaces, and the 8 K photoluminescence (PL) full-width at half-maximum (FWHM) values of the (1 1 1)B samples showed general improvement in the samples' material properties with increasing substrate temperature. While the X-ray diffraction measurements and the AFM images showed little difference between As2 and As4, the 8 K PL FWHM values varied greatly with respect to the arsenic species used. The exact (1 1 1)B samples had narrower 8 K PL FWHM values when grown with As2. For growth on misoriented (1 1 1)B InP, the 8 K FWHM values narrowed with As4. The misoriented (1 1 1)B samples had the narrowest 8 K PL FWHM when grown with As4 at a temperature of 520 °C; the exact (1 1 1)B at 495 °C when grown with As2.",
author = "G. Dagnall and Stock, {S. R.} and Brown, {A. S.}",
year = "1999",
month = "1",
day = "1",
doi = "10.1016/S0022-0248(98)01330-X",
language = "English (US)",
volume = "201",
pages = "242--247",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

Growth of InAsP/InP quantum wells by solid source MBE on misoriented and exact InP (1 1 1)B : Substrate temperature and arsenic species effects. / Dagnall, G.; Stock, S. R.; Brown, A. S.

In: Journal of Crystal Growth, Vol. 201, 01.01.1999, p. 242-247.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Growth of InAsP/InP quantum wells by solid source MBE on misoriented and exact InP (1 1 1)B

T2 - Substrate temperature and arsenic species effects

AU - Dagnall, G.

AU - Stock, S. R.

AU - Brown, A. S.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - Two series of strained InAsP/InP multiquantum wells (MQWs) were grown by solid source molecular beam epitaxy (SSMBE) simultaneously on Fe-doped InP substrates with a growth orientation of either (1 0 0), exact (1 1 1)B, and (1 1 1)B misoriented 1° toward 〈-2 1 1〉. The MQWs were grown using either dimer or tetramer arsenic (As2 or As4) over a substrate temperature range of 420-535 °C. The θ-2θ X-ray diffraction measurements, the atomic force microscopy (AFM) images of the surfaces, and the 8 K photoluminescence (PL) full-width at half-maximum (FWHM) values of the (1 1 1)B samples showed general improvement in the samples' material properties with increasing substrate temperature. While the X-ray diffraction measurements and the AFM images showed little difference between As2 and As4, the 8 K PL FWHM values varied greatly with respect to the arsenic species used. The exact (1 1 1)B samples had narrower 8 K PL FWHM values when grown with As2. For growth on misoriented (1 1 1)B InP, the 8 K FWHM values narrowed with As4. The misoriented (1 1 1)B samples had the narrowest 8 K PL FWHM when grown with As4 at a temperature of 520 °C; the exact (1 1 1)B at 495 °C when grown with As2.

AB - Two series of strained InAsP/InP multiquantum wells (MQWs) were grown by solid source molecular beam epitaxy (SSMBE) simultaneously on Fe-doped InP substrates with a growth orientation of either (1 0 0), exact (1 1 1)B, and (1 1 1)B misoriented 1° toward 〈-2 1 1〉. The MQWs were grown using either dimer or tetramer arsenic (As2 or As4) over a substrate temperature range of 420-535 °C. The θ-2θ X-ray diffraction measurements, the atomic force microscopy (AFM) images of the surfaces, and the 8 K photoluminescence (PL) full-width at half-maximum (FWHM) values of the (1 1 1)B samples showed general improvement in the samples' material properties with increasing substrate temperature. While the X-ray diffraction measurements and the AFM images showed little difference between As2 and As4, the 8 K PL FWHM values varied greatly with respect to the arsenic species used. The exact (1 1 1)B samples had narrower 8 K PL FWHM values when grown with As2. For growth on misoriented (1 1 1)B InP, the 8 K FWHM values narrowed with As4. The misoriented (1 1 1)B samples had the narrowest 8 K PL FWHM when grown with As4 at a temperature of 520 °C; the exact (1 1 1)B at 495 °C when grown with As2.

UR - http://www.scopus.com/inward/record.url?scp=0032659913&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032659913&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(98)01330-X

DO - 10.1016/S0022-0248(98)01330-X

M3 - Conference article

VL - 201

SP - 242

EP - 247

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -