Growth of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications

J. D. Kim; H. Mohseni; J. S. Wojkowski; J. J. Lee; M. Razeghi

doi:10.1117/12.344571

Growth of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications

J. D. Kim^*, H. Mohseni, J. S. Wojkowski, J. J. Lee, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

In this paper, we report on the growth and characterization of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications. The fabrication and characterization of photodetectors from the grown layers are also reported. The photovoltaic and photoconductive devices were grown on (100) GaAs and Si substrates, respectively, using molecular beam epitaxy (MBE). The composition of InAs_1-xSb_x layers was 0.95 in both cases and cut-off wavelength of 7-8 μm has been obtained. At 300 K, the photovoltaic detectors on GaAs substrates resulted in a sharp cut-off wavelength of 7.5 μm with a peak responsivity as high as 0.32 V/W at 6.5 μm For the photoconductive detectors on Si substrates, cut-off wavelength of 8 μm has been observed with a responsivity of 6.3×10^-2 V/W at 7 μm under an electric field of 420 V/m.

Original language	English (US)
Pages (from-to)	338-348
Number of pages	11
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3629
DOIs	https://doi.org/10.1117/12.344571
State	Published - 1999
Event	Proceedings of the 1999 Photodetectors: Materials and Devices IV - San Jose, CA, USA Duration: Jan 27 1999 → Jan 29 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@article{948bd69d27fd4c0ea2a2e3b6d9722ec4,

title = "Growth of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications",

abstract = "In this paper, we report on the growth and characterization of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications. The fabrication and characterization of photodetectors from the grown layers are also reported. The photovoltaic and photoconductive devices were grown on (100) GaAs and Si substrates, respectively, using molecular beam epitaxy (MBE). The composition of InAs1-xSbx layers was 0.95 in both cases and cut-off wavelength of 7-8 μm has been obtained. At 300 K, the photovoltaic detectors on GaAs substrates resulted in a sharp cut-off wavelength of 7.5 μm with a peak responsivity as high as 0.32 V/W at 6.5 μm For the photoconductive detectors on Si substrates, cut-off wavelength of 8 μm has been observed with a responsivity of 6.3×10-2 V/W at 7 μm under an electric field of 420 V/m.",

author = "Kim, {J. D.} and H. Mohseni and Wojkowski, {J. S.} and Lee, {J. J.} and M. Razeghi",

year = "1999",

doi = "10.1117/12.344571",

language = "English (US)",

volume = "3629",

pages = "338--348",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1999 Photodetectors: Materials and Devices IV ; Conference date: 27-01-1999 Through 29-01-1999",

}

TY - JOUR

T1 - Growth of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications

AU - Kim, J. D.

AU - Mohseni, H.

AU - Wojkowski, J. S.

AU - Lee, J. J.

AU - Razeghi, M.

PY - 1999

Y1 - 1999

N2 - In this paper, we report on the growth and characterization of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications. The fabrication and characterization of photodetectors from the grown layers are also reported. The photovoltaic and photoconductive devices were grown on (100) GaAs and Si substrates, respectively, using molecular beam epitaxy (MBE). The composition of InAs1-xSbx layers was 0.95 in both cases and cut-off wavelength of 7-8 μm has been obtained. At 300 K, the photovoltaic detectors on GaAs substrates resulted in a sharp cut-off wavelength of 7.5 μm with a peak responsivity as high as 0.32 V/W at 6.5 μm For the photoconductive detectors on Si substrates, cut-off wavelength of 8 μm has been observed with a responsivity of 6.3×10-2 V/W at 7 μm under an electric field of 420 V/m.

AB - In this paper, we report on the growth and characterization of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications. The fabrication and characterization of photodetectors from the grown layers are also reported. The photovoltaic and photoconductive devices were grown on (100) GaAs and Si substrates, respectively, using molecular beam epitaxy (MBE). The composition of InAs1-xSbx layers was 0.95 in both cases and cut-off wavelength of 7-8 μm has been obtained. At 300 K, the photovoltaic detectors on GaAs substrates resulted in a sharp cut-off wavelength of 7.5 μm with a peak responsivity as high as 0.32 V/W at 6.5 μm For the photoconductive detectors on Si substrates, cut-off wavelength of 8 μm has been observed with a responsivity of 6.3×10-2 V/W at 7 μm under an electric field of 420 V/m.

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UR - http://www.scopus.com/inward/citedby.url?scp=0032683888&partnerID=8YFLogxK

U2 - 10.1117/12.344571

DO - 10.1117/12.344571

M3 - Conference article

AN - SCOPUS:0032683888

SN - 0277-786X

VL - 3629

SP - 338

EP - 348

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1999 Photodetectors: Materials and Devices IV

Y2 - 27 January 1999 through 29 January 1999

ER -

Growth of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications

Abstract

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UN SDGs

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