Growth of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications

J. D. Kim*, H. Mohseni, J. S. Wojkowski, J. J. Lee, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

In this paper, we report on the growth and characterization of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications. The fabrication and characterization of photodetectors from the grown layers are also reported. The photovoltaic and photoconductive devices were grown on (100) GaAs and Si substrates, respectively, using molecular beam epitaxy (MBE). The composition of InAs1-xSbx layers was 0.95 in both cases and cut-off wavelength of 7-8 μm has been obtained. At 300 K, the photovoltaic detectors on GaAs substrates resulted in a sharp cut-off wavelength of 7.5 μm with a peak responsivity as high as 0.32 V/W at 6.5 μm For the photoconductive detectors on Si substrates, cut-off wavelength of 8 μm has been observed with a responsivity of 6.3×10-2 V/W at 7 μm under an electric field of 420 V/m.

Original languageEnglish (US)
Pages (from-to)338-348
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3629
StatePublished - Jan 1 1999
EventProceedings of the 1999 Photodetectors: Materials and Devices IV - San Jose, CA, USA
Duration: Jan 27 1999Jan 29 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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