Growth of In1-xTlxSb, a new infrared material, by low-pressure metalorganic chemical vapor deposition

Y. H. Choi*, C. Besikci, R. Sudharsanan, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

38 Scopus citations

Abstract

We report the growth of In1-xTlxSb, a new III-V alloy for long-wavelength infrared detector applications, by low-pressure metalorganic chemical vapor deposition. In1-xTlxSb with good surface morphology was obtained on both GaAs and InSb substrates at a growth temperature of 455°C. X-ray diffraction measurements showed resolved peaks of In1-xTlxSb and InSb films. Infrared absorption spectrum of In1-xTlxSb showed a shift toward lower energies compared to InSb spectrum. Hall mobility data on In 1-xTlxSb/InSb/GaAs structure showed enhanced mobility at low temperatures compared to InSb/GaAs structure.

Original languageEnglish (US)
Pages (from-to)361-363
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number3
DOIs
StatePublished - Dec 1 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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