The impact of the Bi surfactant layer on the growth of InxGa1-xAs/GaAs heterostructures by molecular beam epitaxy was examined by atomic force microscopy, reflection high energy electron diffraction, X-ray diffraction analysis, and photoluminescence spectroscopy. Results showed that Bi improves the structural and optical quality of InGaAs/GaAs structures by reducing the interfacial roughness and broadening, and by producing more intense photoluminescence peaks than those of heterostructures grown without Bi.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - May 2000|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering