Growth of InxGa1-xAs/GaAs heterostructures using Bi as a surfactant

M. R. Pillai; Seong Soo Kim; S. T. Ho; S. A. Barnett

doi:10.1116/1.591367

Growth of In_xGa_1-xAs/GaAs heterostructures using Bi as a surfactant

M. R. Pillai^*, Seong Soo Kim, S. T. Ho, S. A. Barnett

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

The impact of the Bi surfactant layer on the growth of In_xGa_1-xAs/GaAs heterostructures by molecular beam epitaxy was examined by atomic force microscopy, reflection high energy electron diffraction, X-ray diffraction analysis, and photoluminescence spectroscopy. Results showed that Bi improves the structural and optical quality of InGaAs/GaAs structures by reducing the interfacial roughness and broadening, and by producing more intense photoluminescence peaks than those of heterostructures grown without Bi.

Original language	English (US)
Pages (from-to)	1232-1236
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	3
DOIs	https://doi.org/10.1116/1.591367
State	Published - May 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "The impact of the Bi surfactant layer on the growth of InxGa1-xAs/GaAs heterostructures by molecular beam epitaxy was examined by atomic force microscopy, reflection high energy electron diffraction, X-ray diffraction analysis, and photoluminescence spectroscopy. Results showed that Bi improves the structural and optical quality of InGaAs/GaAs structures by reducing the interfacial roughness and broadening, and by producing more intense photoluminescence peaks than those of heterostructures grown without Bi.",

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AU - Pillai, M. R.

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AU - Ho, S. T.

AU - Barnett, S. A.

PY - 2000/5

Y1 - 2000/5

N2 - The impact of the Bi surfactant layer on the growth of InxGa1-xAs/GaAs heterostructures by molecular beam epitaxy was examined by atomic force microscopy, reflection high energy electron diffraction, X-ray diffraction analysis, and photoluminescence spectroscopy. Results showed that Bi improves the structural and optical quality of InGaAs/GaAs structures by reducing the interfacial roughness and broadening, and by producing more intense photoluminescence peaks than those of heterostructures grown without Bi.

AB - The impact of the Bi surfactant layer on the growth of InxGa1-xAs/GaAs heterostructures by molecular beam epitaxy was examined by atomic force microscopy, reflection high energy electron diffraction, X-ray diffraction analysis, and photoluminescence spectroscopy. Results showed that Bi improves the structural and optical quality of InGaAs/GaAs structures by reducing the interfacial roughness and broadening, and by producing more intense photoluminescence peaks than those of heterostructures grown without Bi.

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Growth of In_xGa_1-xAs/GaAs heterostructures using Bi as a surfactant

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