Growth of InxGa1-xAs/GaAs heterostructures using Bi as a surfactant

M. R. Pillai*, Seong Soo Kim, S. T. Ho, S. A. Barnett

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

72 Scopus citations

Abstract

The impact of the Bi surfactant layer on the growth of InxGa1-xAs/GaAs heterostructures by molecular beam epitaxy was examined by atomic force microscopy, reflection high energy electron diffraction, X-ray diffraction analysis, and photoluminescence spectroscopy. Results showed that Bi improves the structural and optical quality of InGaAs/GaAs structures by reducing the interfacial roughness and broadening, and by producing more intense photoluminescence peaks than those of heterostructures grown without Bi.

Original languageEnglish (US)
Pages (from-to)1232-1236
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number3
DOIs
StatePublished - May 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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