Growth of In_xGa_1-xAs/GaAs heterostructures using Bi as a surfactant

INIS

• gallium arsenides 100%
• growth 66%
• photoluminescence 66%
• surfactants 66%
• spectroscopy 33%
• x-ray diffraction 33%
• energy 33%
• layers 33%
• reflection 33%
• peaks 33%
• molecular beam epitaxy 33%
• atomic force microscopy 33%
• roughness 33%
• electron diffraction 33%
• diffraction (x-ray) 33%

Material Science

• Gallium Arsenide 100%
• Heterojunction 100%
• Surface Active Agent 66%
• Photoluminescence 66%
• X Ray Diffraction Analysis 33%
• Reflection High-Energy Electron Diffraction 33%
• Molecular Beam Epitaxy 33%
• Atomic Force Microscopy 33%
• Indium Gallium Arsenide 33%