Growth of MgO by metal-organic molecular beam epitaxy

Feng Niu, Brent H. Hoerman, Bruce W Wessels

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


MgO thin films were deposited on (100) Si substrates by metal-organic molecular beam epitaxy (MOMBE). Magnesium acetylacetonate was used as the precursor and an oxygen RF plasma was used as the oxidant. The films were characterized by a combination of transmission electron microscopy, Auger spectrometry and atomic force microscopy. Analysis indicate that the films directly deposited on Si substrates are stoichiometric, phase-pure, polycrystalline MgO with a [100] texture. Carbon contamination of the films resulting from precursor decomposition was not observed within detection limits. Furthermore, the growth rate of MgO has been systematically investigated as a function of growth temperature.

Original languageEnglish (US)
Pages (from-to)45-50
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Dec 11 2000
EventChemical Processing of Dielectrics, Insulators and Electronic Ceramics - Boston, MA, USA
Duration: Nov 29 1999Dec 1 1999

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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