We report the molecular beam epitaxy growth of α-Sn films on argon sputter cleaned (001) CdTe substrates on which a buffer layer of CdTe has been deposited. Films thinner than 400 Å are p-type with carrier densities as high as 2×1019 cm-3; thicker films are n-type with carrier densities of (4-10)×1017. The best film had a mobility of 1.3×104 cm2/V s at 77 K.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)