Growth of n-type heteroepitaxial films of gray tin on (001) CdTe by molecular beam epitaxy

Li Wei Tu; George K. Wong; John B. Ketterson

doi:10.1063/1.100782

Growth of n-type heteroepitaxial films of gray tin on (001) CdTe by molecular beam epitaxy

Li Wei Tu^*, George K. Wong, John B. Ketterson

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report the molecular beam epitaxy growth of α-Sn films on argon sputter cleaned (001) CdTe substrates on which a buffer layer of CdTe has been deposited. Films thinner than 400 Å are p-type with carrier densities as high as 2×10¹⁹ cm^-3; thicker films are n-type with carrier densities of (4-10)×10¹⁷. The best film had a mobility of 1.3×10⁴ cm²/V s at 77 K.

Original language	English (US)
Pages (from-to)	1010-1012
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	11
DOIs	https://doi.org/10.1063/1.100782
State	Published - 1989

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Growth of n-type heteroepitaxial films of gray tin on (001) CdTe by molecular beam epitaxy",

abstract = "We report the molecular beam epitaxy growth of α-Sn films on argon sputter cleaned (001) CdTe substrates on which a buffer layer of CdTe has been deposited. Films thinner than 400 {\AA} are p-type with carrier densities as high as 2×1019 cm-3; thicker films are n-type with carrier densities of (4-10)×1017. The best film had a mobility of 1.3×104 cm2/V s at 77 K.",

author = "Tu, {Li Wei} and Wong, {George K.} and Ketterson, {John B.}",

year = "1989",

doi = "10.1063/1.100782",

language = "English (US)",

volume = "54",

pages = "1010--1012",

journal = "Applied Physics Letters",

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T1 - Growth of n-type heteroepitaxial films of gray tin on (001) CdTe by molecular beam epitaxy

AU - Tu, Li Wei

AU - Wong, George K.

AU - Ketterson, John B.

PY - 1989

Y1 - 1989

N2 - We report the molecular beam epitaxy growth of α-Sn films on argon sputter cleaned (001) CdTe substrates on which a buffer layer of CdTe has been deposited. Films thinner than 400 Å are p-type with carrier densities as high as 2×1019 cm-3; thicker films are n-type with carrier densities of (4-10)×1017. The best film had a mobility of 1.3×104 cm2/V s at 77 K.

AB - We report the molecular beam epitaxy growth of α-Sn films on argon sputter cleaned (001) CdTe substrates on which a buffer layer of CdTe has been deposited. Films thinner than 400 Å are p-type with carrier densities as high as 2×1019 cm-3; thicker films are n-type with carrier densities of (4-10)×1017. The best film had a mobility of 1.3×104 cm2/V s at 77 K.

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U2 - 10.1063/1.100782

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Growth of n-type heteroepitaxial films of gray tin on (001) CdTe by molecular beam epitaxy

Abstract

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