Abstract
We report the molecular beam epitaxy growth of α-Sn films on argon sputter cleaned (001) CdTe substrates on which a buffer layer of CdTe has been deposited. Films thinner than 400 Å are p-type with carrier densities as high as 2×1019 cm-3; thicker films are n-type with carrier densities of (4-10)×1017. The best film had a mobility of 1.3×104 cm2/V s at 77 K.
Original language | English (US) |
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Pages (from-to) | 1010-1012 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 54 |
Issue number | 11 |
DOIs | |
State | Published - 1989 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)