Growth of n-type heteroepitaxial films of gray tin on (001) CdTe by molecular beam epitaxy

Li Wei Tu*, George K. Wong, John B Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

We report the molecular beam epitaxy growth of α-Sn films on argon sputter cleaned (001) CdTe substrates on which a buffer layer of CdTe has been deposited. Films thinner than 400 Å are p-type with carrier densities as high as 2×1019 cm-3; thicker films are n-type with carrier densities of (4-10)×1017. The best film had a mobility of 1.3×104 cm2/V s at 77 K.

Original languageEnglish (US)
Pages (from-to)1010-1012
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number11
DOIs
StatePublished - Dec 1 1989

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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