TY - JOUR
T1 - Growth of thin niobium crystals by the strain-anneal method
AU - Stock, S. R.
AU - Chen, Haydn
AU - Birnbaum, H. K.
N1 - Funding Information:
This work was supported by the Office of Naval Research through contract N00014-75-C-1012. We acknowledge use of the facilities of the MRL Center for Microanalysis of Materials, which is supported as a national facility by the Materials Sciences Division of the United States Department of Energy, and of the white beam topography station of the Daresbury Synchrotron Radiation Source. We would also like to thank the following individuals for their assistance: Mr. P.C. Huang, Georgia Institute of Technology, for mak- ing the rocking curve measurements; Dr. E.A. Clark, formerly of the University of Illinois, for help with resistivity measurements of the interstitial content of our niobium crystals, and Dr. D.K.
PY - 1987/9
Y1 - 1987/9
N2 - A technique suitable for the growth of thin, niobium single crystals is described. Crystals with thicknesses ranging between 25 μ m and 7 mm were grown. These crystals are highly perfect and require no preparation, other than a light chemical polish, prior to being studied directly with X-ray topography. Laboratory double crystal and synchrotron white beam topography showed that dislocation densities were less than 104 cm-2 in carefully handled crystals. The particular advantage of this method is the minimal specimen preparation which is required.
AB - A technique suitable for the growth of thin, niobium single crystals is described. Crystals with thicknesses ranging between 25 μ m and 7 mm were grown. These crystals are highly perfect and require no preparation, other than a light chemical polish, prior to being studied directly with X-ray topography. Laboratory double crystal and synchrotron white beam topography showed that dislocation densities were less than 104 cm-2 in carefully handled crystals. The particular advantage of this method is the minimal specimen preparation which is required.
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U2 - 10.1016/0022-0248(87)90271-5
DO - 10.1016/0022-0248(87)90271-5
M3 - Article
AN - SCOPUS:0023415760
VL - 84
SP - 419
EP - 424
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3
ER -