Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition

L. A. Wills*, W. A. Feil, B. W. Wessels, L. M. Tonge, T. J. Marks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

Low pressure organometallic chemical vapor deposition was used to prepare ferroelectric thin films. Both the bismuth and the strontium titanate system were investigated. Under the optimal growth conditions phase pure, textured films could be prepared. The growth parameters which influenced composition and phase stability were examined.

Original languageEnglish (US)
Pages (from-to)712-715
Number of pages4
JournalJournal of Crystal Growth
Volume107
Issue number1-4
DOIs
StatePublished - Jan 1 1991

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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