Growth temperature uniformity of MBE-grown GaAs determined by scanning room temperature photoluminescence

K. Stair*, T. Bird, A. Moretti, F. Chambers, C. Choi-Feng

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We have used scanning room temperature photoluminescence to map GaAs quantum well widths and AlGaAs barrier compositions over 2-inch and 3-inch diameter epitaxial layers grown by MBE at temperatures ranging from 600 to 700°C. Analysis of these maps allows a non-destructive quantitative analysis of the GaAs growth rate uniformity from which we can calculate the temperature distribution during growth. We have used this technique to compare the thermal uniformity of various substrate holders designed for use in the Intevac ModGenII MBE system.

Original languageEnglish (US)
Pages (from-to)29-34
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume340
StatePublished - Dec 1 1994
EventProceedings of the MRS Symposium - San Francisco, CA, USA
Duration: Apr 4 1994Apr 7 1994

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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