Guided self assembly of InAs quantum dots on a cleaved facet

Emanuele Uccelli*, Dieter Schuh, Jochen Bauer, Max Bichler, Jonathan J. Finley, Matthew Grayson, Gerhard Abstreiter, Anna Fontcuberta I Morral

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


The long range ordering of epitaxial semiconductor quantum dots (QDs) has been obtained by combing self assembly with the cleaved edge overgrowth technique. The introduction of nanometer thick AlAs stripes on a (110) oriented GaAs surface avoids the misfit dislocation growth mechanism of InAs on GaAs (110) and drives the formation of array of QDs. Atomic Force Microscopy (AFM) investigations highlight that InAs QDs only nucleate in chain like structure on Al-rich regions. Here, we present experimental results that demonstrate the ability to create ordered QDs lattices and discuss the conditions under which preferential growth of QDs on the AlAs stripes occurs.

Original languageEnglish (US)
Title of host publicationQuantum Dots
Subtitle of host publicationGrowth, Behavior and Applications
Number of pages5
StatePublished - Dec 1 2007
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006


Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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