H atom mobilies in xenon matrices. Dependence on matrix morphology

D. LaBrake; Eric Weitz

doi:10.1016/0009-2614(93)87086-I

H atom mobilies in xenon matrices. Dependence on matrix morphology

D. LaBrake^*, Eric Weitz

^*Corresponding author for this work

Chemistry

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33 Scopus citations

Abstract

The concentration of H atoms in xenon matrices, produced by 193 nm photolysis of HBr, has been monitored by laser-induced emission from xenon-hydrogen exciplexes. At 10 K the H-atom concentration remains unchanged over the course of five days. At 40 K the majority of atom loss occurs on a timescale of minutes and is sensitive to matrix preparation. At 40 K diffusion coefficients for the major H atom loss processes have been estimated as 5.0×10^-14 cm²/s and 2.6×10^-13 cm²/s for xenon matrices deposited at 28 and 10 K respectively. An upper limit of ≈ 10^-17 cm²/s can be obtained for the diffusion coefficient at 10 K. The effect of matrix morphology on atom mobilities is discussed.

Original language	English (US)
Pages (from-to)	430-435
Number of pages	6
Journal	Chemical Physics Letters
Volume	211
Issue number	4-5
DOIs	https://doi.org/10.1016/0009-2614(93)87086-I
State	Published - Aug 20 1993

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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title = "H atom mobilies in xenon matrices. Dependence on matrix morphology",

abstract = "The concentration of H atoms in xenon matrices, produced by 193 nm photolysis of HBr, has been monitored by laser-induced emission from xenon-hydrogen exciplexes. At 10 K the H-atom concentration remains unchanged over the course of five days. At 40 K the majority of atom loss occurs on a timescale of minutes and is sensitive to matrix preparation. At 40 K diffusion coefficients for the major H atom loss processes have been estimated as 5.0×10-14 cm2/s and 2.6×10-13 cm2/s for xenon matrices deposited at 28 and 10 K respectively. An upper limit of ≈ 10-17 cm2/s can be obtained for the diffusion coefficient at 10 K. The effect of matrix morphology on atom mobilities is discussed.",

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doi = "10.1016/0009-2614(93)87086-I",

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T1 - H atom mobilies in xenon matrices. Dependence on matrix morphology

AU - LaBrake, D.

AU - Weitz, Eric

PY - 1993/8/20

Y1 - 1993/8/20

N2 - The concentration of H atoms in xenon matrices, produced by 193 nm photolysis of HBr, has been monitored by laser-induced emission from xenon-hydrogen exciplexes. At 10 K the H-atom concentration remains unchanged over the course of five days. At 40 K the majority of atom loss occurs on a timescale of minutes and is sensitive to matrix preparation. At 40 K diffusion coefficients for the major H atom loss processes have been estimated as 5.0×10-14 cm2/s and 2.6×10-13 cm2/s for xenon matrices deposited at 28 and 10 K respectively. An upper limit of ≈ 10-17 cm2/s can be obtained for the diffusion coefficient at 10 K. The effect of matrix morphology on atom mobilities is discussed.

AB - The concentration of H atoms in xenon matrices, produced by 193 nm photolysis of HBr, has been monitored by laser-induced emission from xenon-hydrogen exciplexes. At 10 K the H-atom concentration remains unchanged over the course of five days. At 40 K the majority of atom loss occurs on a timescale of minutes and is sensitive to matrix preparation. At 40 K diffusion coefficients for the major H atom loss processes have been estimated as 5.0×10-14 cm2/s and 2.6×10-13 cm2/s for xenon matrices deposited at 28 and 10 K respectively. An upper limit of ≈ 10-17 cm2/s can be obtained for the diffusion coefficient at 10 K. The effect of matrix morphology on atom mobilities is discussed.

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DO - 10.1016/0009-2614(93)87086-I

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EP - 435

JO - Chemical Physics Letters

JF - Chemical Physics Letters

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ER -

H atom mobilies in xenon matrices. Dependence on matrix morphology

Abstract

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