H atom mobilies in xenon matrices. Dependence on matrix morphology

D. LaBrake*, Eric Weitz

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

The concentration of H atoms in xenon matrices, produced by 193 nm photolysis of HBr, has been monitored by laser-induced emission from xenon-hydrogen exciplexes. At 10 K the H-atom concentration remains unchanged over the course of five days. At 40 K the majority of atom loss occurs on a timescale of minutes and is sensitive to matrix preparation. At 40 K diffusion coefficients for the major H atom loss processes have been estimated as 5.0×10-14 cm2/s and 2.6×10-13 cm2/s for xenon matrices deposited at 28 and 10 K respectively. An upper limit of ≈ 10-17 cm2/s can be obtained for the diffusion coefficient at 10 K. The effect of matrix morphology on atom mobilities is discussed.

Original languageEnglish (US)
Pages (from-to)430-435
Number of pages6
JournalChemical Physics Letters
Volume211
Issue number4-5
DOIs
StatePublished - Aug 20 1993

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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