Hall effect in the accumulation layers on the surface of organic semiconductors

V. Podzorov*, E. Menard, J. A. Rogers, M. E. Gershenson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

329 Scopus citations

Abstract

We have observed the Hall effect in the field-induced accumulation layer on the surface of single-crystal samples of a small-molecule organic semiconductor rubrene. The Hall mobility μH increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction regimes. In the intrinsic regime, the density of mobile field-induced charge carriers extracted from the Hall measurements, nH, coincides with the density n calculated using the gate-channel capacitance and becomes smaller than n in the trap-dominated regime. The Hall data are consistent with the diffusive bandlike motion of field-induced charge carriers between trapping events.

Original languageEnglish (US)
Article number226601
JournalPhysical review letters
Volume95
Issue number22
DOIs
StatePublished - Nov 25 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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