Hartree simulations of coupled quantum Hall edge states in corner-overgrown heterostructures

L. Steinke*, P. Cantwell, E. Stach, D. Schuh, A. Fontcuberta I Morral, M. Bichler, G. Abstreiter, M. Grayson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The electronic states in a corner-overgrown bent GaAs/AlGaAs quantum well heterostructure are studied with numerical Hartree simulations. Transmission electron microscope pictures of the junction sharpness are shown to justify the sharp-corner potential assumed for these calculations. In a tilted magnetic field, both facets of the bent quantum well are brought to a quantum Hall (QH) state, and the corner hosts an unconventional hybrid system of coupled counter-propagating quantum Hall edges and an additional 1D accumulation wire. We show how, in contrast to coplanar barrier-junctions of QH systems, the coupling between the three subsystems increases as a function of the applied magnetic field, and discuss the implications of the numerical results for the interpretation of experimental data on bent quantum Hall systems reported elsewhere.

Original languageEnglish (US)
Article number165428
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
StatePublished - Apr 17 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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