Heavy-metal-free solution-processed nanoparticle-based photodetectors: Doping of intrinsic vacancies enables engineering of sensitivity and speed

Jiang Tang, Gerasimos Konstantatos, Sean Hinds, Stefan Myrskog, Andras G. Pattantyus-Abraham, Jason Clifford, Edward H. Sargent

Research output: Contribution to journalArticlepeer-review

75 Scopus citations

Abstract

Photodetection in semiconductors enables digital imaging, spectroscopy, and optical communications. Integration of solution-processed light-sensing materials with a range of substrates offers access to new spectral regimes, the prospect of enhanced sensitivity, and compatibility with flexible electronics. Photoconductive photodetectors based on solution-cast nanocrystals have shown tremendous progress in recent years; however, high-performance reports to date have employed Pb- and Cd-containing materials. Here we report a high-sensitivity (photon-to-electron gain >40), high-speed (video-frame-rate-compatible) photoconductive photodetector based on ln 2S 3. Only by decreasing the energetic depth of hole traps associated with intrinsic vacancies in beta-phase ln 2S 3 were we able to achieve this needed combination of sensitivity and speed. Our incorporation of Cu + cations into beta-ln 2S 3's spinel vacancies that led to acceptable temporal response in the devices showcases the practicality of incorporating dopants into nanoparticles. The devices are stable in air and under heating to 215 °C, advantages rooted in the reliance on the stable inclusion of dopants into available sites instead of surface oxide species.

Original languageEnglish (US)
Pages (from-to)331-338
Number of pages8
JournalACS nano
Volume3
Issue number2
DOIs
StatePublished - Feb 24 2009

Keywords

  • Doping
  • Indium sulfide
  • Intrinsic vacancy
  • Photoconductive
  • Photodetector
  • Solution-processed

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy

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