High quality InAsxP1-x epitaxial layers were heteroepitaxially deposited on InP substrates from the vapor phase using the hydride technique. For phosphorus rich alloys electron mobilities as high as 29 800 cm2/Vs were observed at 77 K. Electrical data indicated that ionized impurity scattering was limiting the mobility at low temperatures since alloys had 77-K mobilities comparable to that of InP grown in this system. Alloys with high electron mobilities could be prepared without deliberate compositional grading.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Dec 1 1984|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)