Heteroepitaxial growth of high mobility InAsP from the vapor phase

P. J. Wang; B. W. Wessels

doi:10.1063/1.94910

Heteroepitaxial growth of high mobility InAsP from the vapor phase

P. J. Wang^*, B. W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

High quality InAs_xP_1-x epitaxial layers were heteroepitaxially deposited on InP substrates from the vapor phase using the hydride technique. For phosphorus rich alloys electron mobilities as high as 29 800 cm²/Vs were observed at 77 K. Electrical data indicated that ionized impurity scattering was limiting the mobility at low temperatures since alloys had 77-K mobilities comparable to that of InP grown in this system. Alloys with high electron mobilities could be prepared without deliberate compositional grading.

Original language	English (US)
Pages (from-to)	766-768
Number of pages	3
Journal	Applied Physics Letters
Volume	44
Issue number	8
DOIs	https://doi.org/10.1063/1.94910
State	Published - Dec 1 1984

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "High quality InAsxP1-x epitaxial layers were heteroepitaxially deposited on InP substrates from the vapor phase using the hydride technique. For phosphorus rich alloys electron mobilities as high as 29 800 cm2/Vs were observed at 77 K. Electrical data indicated that ionized impurity scattering was limiting the mobility at low temperatures since alloys had 77-K mobilities comparable to that of InP grown in this system. Alloys with high electron mobilities could be prepared without deliberate compositional grading.",

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AU - Wessels, B. W.

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N2 - High quality InAsxP1-x epitaxial layers were heteroepitaxially deposited on InP substrates from the vapor phase using the hydride technique. For phosphorus rich alloys electron mobilities as high as 29 800 cm2/Vs were observed at 77 K. Electrical data indicated that ionized impurity scattering was limiting the mobility at low temperatures since alloys had 77-K mobilities comparable to that of InP grown in this system. Alloys with high electron mobilities could be prepared without deliberate compositional grading.

AB - High quality InAsxP1-x epitaxial layers were heteroepitaxially deposited on InP substrates from the vapor phase using the hydride technique. For phosphorus rich alloys electron mobilities as high as 29 800 cm2/Vs were observed at 77 K. Electrical data indicated that ionized impurity scattering was limiting the mobility at low temperatures since alloys had 77-K mobilities comparable to that of InP grown in this system. Alloys with high electron mobilities could be prepared without deliberate compositional grading.

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Heteroepitaxial growth of high mobility InAsP from the vapor phase

Abstract

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