Heteroepitaxial growth of high mobility InAsP from the vapor phase

P. J. Wang*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

High quality InAsxP1-x epitaxial layers were heteroepitaxially deposited on InP substrates from the vapor phase using the hydride technique. For phosphorus rich alloys electron mobilities as high as 29 800 cm2/Vs were observed at 77 K. Electrical data indicated that ionized impurity scattering was limiting the mobility at low temperatures since alloys had 77-K mobilities comparable to that of InP grown in this system. Alloys with high electron mobilities could be prepared without deliberate compositional grading.

Original languageEnglish (US)
Pages (from-to)766-768
Number of pages3
JournalApplied Physics Letters
Volume44
Issue number8
DOIs
StatePublished - 1984

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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