Heterogeneous Si/III-V integration and the optical vertical interconnect access

Qian Wang*, Doris Keh Ting Ng, Yadong Wang, Yongqiang Wei, Jing Pu, Payam Rabiei, Seng Tiong Ho

*Corresponding author for this work

Research output: Contribution to journalArticle

26 Scopus citations

Abstract

A new heterogeneous Si/III-V integration and the optical vertical interconnect access to the silicon-on-insulator (SOI) nanophotonic layer is proposed and designed. The III-V semiconductor layers are directly bonded to the SOI layer and etched to form the Si/III-V waveguide (after removal of the substrate), which has no air-trench or SOI channel waveguide underneath as the prior art. The design example shows a 1.5 μm wide Si/IIIV waveguide has a confinement factor of ∼24% in a 100 nm-thick active region for effective light amplification/absorption. The optical vertical interconnect access is realized through tapering both the III-V semiconductor waveguide and SOI layer in the same direction. Optimization using a simple approximated two-dimensional modal presented gives ∼100% coupling efficiency with a 25 μm long optical vertical interconnect access. A three-dimensional finite-difference-timedomain electromagnetic simulation verifies the design numerically and also shows the proposed structure has a good alignment tolerance for fabrication.

Original languageEnglish (US)
Pages (from-to)16745-16756
Number of pages12
JournalOptics Express
Volume20
Issue number15
DOIs
StatePublished - Jul 16 2012

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Wang, Q., Ting Ng, D. K., Wang, Y., Wei, Y., Pu, J., Rabiei, P., & Ho, S. T. (2012). Heterogeneous Si/III-V integration and the optical vertical interconnect access. Optics Express, 20(15), 16745-16756. https://doi.org/10.1364/OE.20.016745