Heterojunction phototransistor for highly sensitive infrared detection

Mohsen Rezaei, Min Su Park, Chee Leong Tan, Cobi Rabinowitz, Skyler Wheaton, Hooman Mohseni*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this work, we have proposed a model for the ultimate physical limit on the sensitivity of the heterojunction bipolar phototransistors (HPTs). Based on our modeling we have extracted the design criteria for the HPT for high sensitivity application. HPT with the submicron emitter and base area has the potential to be used for the low number photon resolving in near-infrared (NIR) wavelength. However, in practice, the quality of materials, processing, and the passivation plays an important role in the realization of the highly sensitive HPT. For short wave infrared (SWIR) HPTs based on lattice matched InGaAs to InP is studied. For these devices, conditions to reach to the highest possible sensitivity is examined. We have made an HPT based on InGaAs collector and base on the InP substrate. After developing proper processing combination of wet and dry etching and the surface passivation for the device we made an imager with 320x256 pixels based with a 30m pixel pitch. The imager shows the sensitivity less the 30 photons for each pixel with the frame rate more than 1K frames per second.

Original languageEnglish (US)
Title of host publicationInfrared Technology and Applications XLIII
EditorsBjorn F. Andresen, Charles M. Hanson, John L. Miller, Paul R. Norton, Gabor F. Fulop
PublisherSPIE
Volume10177
ISBN (Electronic)9781510608559
DOIs
StatePublished - Jan 1 2017
EventInfrared Technology and Applications XLIII - Anaheim, United States
Duration: Apr 9 2017Apr 13 2017

Other

OtherInfrared Technology and Applications XLIII
CountryUnited States
CityAnaheim
Period4/9/174/13/17

Keywords

  • Electron Injection Detector
  • FPA
  • Infrared Sensor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Rezaei, M., Park, M. S., Tan, C. L., Rabinowitz, C., Wheaton, S., & Mohseni, H. (2017). Heterojunction phototransistor for highly sensitive infrared detection. In B. F. Andresen, C. M. Hanson, J. L. Miller, P. R. Norton, & G. F. Fulop (Eds.), Infrared Technology and Applications XLIII (Vol. 10177). [101771O] SPIE. https://doi.org/10.1117/12.2262931