Heterostructures overgrown on GaAs corner substrates

D. Schuh*, M. Grayson, M. Bichler, G. Abstreiter

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

By choosing suitable crystal facets we are able to epitaxially overgrow a precleaved corner-substrate. We are using GaAs (110)-like facets and growth conditions such that no accumulation or depletion of deposited material near the corner is observed, avoiding morphological changes at the corner during the growth process. So we achieve high-quality layer growth across the corner. With this technique we demonstrate a new type of quantum confinement structure consisting of a GaAs/AlGaAs heterostructure overgrown on top of this precleaved corner-substrate.

Original languageEnglish (US)
Pages (from-to)293-297
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume23
Issue number3-4 SPEC. ISS.
DOIs
StatePublished - Jul 2004
EventProceedings of the Fifth International Workshop on Expitaxial - Stuttgart, Germany
Duration: Oct 13 2003Oct 15 2003

Keywords

  • Corner overgrowth
  • Crystal regrowth
  • GaAs
  • Molecular beam epitaxy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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