Heterostructures overgrown on GaAs corner substrates

D. Schuh; M. Grayson; M. Bichler; G. Abstreiter

doi:10.1016/j.physe.2003.12.132

Heterostructures overgrown on GaAs corner substrates

D. Schuh^*, M. Grayson, M. Bichler, G. Abstreiter

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

By choosing suitable crystal facets we are able to epitaxially overgrow a precleaved corner-substrate. We are using GaAs (110)-like facets and growth conditions such that no accumulation or depletion of deposited material near the corner is observed, avoiding morphological changes at the corner during the growth process. So we achieve high-quality layer growth across the corner. With this technique we demonstrate a new type of quantum confinement structure consisting of a GaAs/AlGaAs heterostructure overgrown on top of this precleaved corner-substrate.

Original language	English (US)
Pages (from-to)	293-297
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	23
Issue number	3-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physe.2003.12.132
State	Published - Jul 2004
Event	Proceedings of the Fifth International Workshop on Expitaxial - Stuttgart, Germany Duration: Oct 13 2003 → Oct 15 2003

Keywords

Corner overgrowth
Crystal regrowth
GaAs
Molecular beam epitaxy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2003.12.132

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title = "Heterostructures overgrown on GaAs corner substrates",

abstract = "By choosing suitable crystal facets we are able to epitaxially overgrow a precleaved corner-substrate. We are using GaAs (110)-like facets and growth conditions such that no accumulation or depletion of deposited material near the corner is observed, avoiding morphological changes at the corner during the growth process. So we achieve high-quality layer growth across the corner. With this technique we demonstrate a new type of quantum confinement structure consisting of a GaAs/AlGaAs heterostructure overgrown on top of this precleaved corner-substrate.",

keywords = "Corner overgrowth, Crystal regrowth, GaAs, Molecular beam epitaxy",

author = "D. Schuh and M. Grayson and M. Bichler and G. Abstreiter",

note = "Funding Information: Part of this work was supported financially by Deutsche Forschungsgemeinschaft via {\textquoteleft}Schwerpunktprogramm Quanten-Hall-Systeme (SPP 1092){\textquoteright}. The authors wish to thank S. Roth for the SEM picture. One of the authors (M.G.) also thanks the A.v. Humboldt Foundation for support. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; Proceedings of the Fifth International Workshop on Expitaxial ; Conference date: 13-10-2003 Through 15-10-2003",

year = "2004",

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doi = "10.1016/j.physe.2003.12.132",

language = "English (US)",

volume = "23",

pages = "293--297",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

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TY - JOUR

T1 - Heterostructures overgrown on GaAs corner substrates

AU - Schuh, D.

AU - Grayson, M.

AU - Bichler, M.

AU - Abstreiter, G.

N1 - Funding Information: Part of this work was supported financially by Deutsche Forschungsgemeinschaft via ‘Schwerpunktprogramm Quanten-Hall-Systeme (SPP 1092)’. The authors wish to thank S. Roth for the SEM picture. One of the authors (M.G.) also thanks the A.v. Humboldt Foundation for support. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2004/7

Y1 - 2004/7

N2 - By choosing suitable crystal facets we are able to epitaxially overgrow a precleaved corner-substrate. We are using GaAs (110)-like facets and growth conditions such that no accumulation or depletion of deposited material near the corner is observed, avoiding morphological changes at the corner during the growth process. So we achieve high-quality layer growth across the corner. With this technique we demonstrate a new type of quantum confinement structure consisting of a GaAs/AlGaAs heterostructure overgrown on top of this precleaved corner-substrate.

AB - By choosing suitable crystal facets we are able to epitaxially overgrow a precleaved corner-substrate. We are using GaAs (110)-like facets and growth conditions such that no accumulation or depletion of deposited material near the corner is observed, avoiding morphological changes at the corner during the growth process. So we achieve high-quality layer growth across the corner. With this technique we demonstrate a new type of quantum confinement structure consisting of a GaAs/AlGaAs heterostructure overgrown on top of this precleaved corner-substrate.

KW - Corner overgrowth

KW - Crystal regrowth

KW - GaAs

KW - Molecular beam epitaxy

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U2 - 10.1016/j.physe.2003.12.132

DO - 10.1016/j.physe.2003.12.132

M3 - Conference article

AN - SCOPUS:3142706520

SN - 1386-9477

VL - 23

SP - 293

EP - 297

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 3-4 SPEC. ISS.

T2 - Proceedings of the Fifth International Workshop on Expitaxial

Y2 - 13 October 2003 through 15 October 2003

ER -

Heterostructures overgrown on GaAs corner substrates

Abstract

Keywords

ASJC Scopus subject areas

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