High carrier lifetime InSb grown on GaAs substrates

E. Michel; H. Mohseni; J. D. Kim; J. Wojkowski; J. Sandven; J. Xu; M. Razeghi; R. Bredthauer; P. Vu; W. Mitchel; M. Ahoujja

doi:10.1063/1.119731

High carrier lifetime InSb grown on GaAs substrates

E. Michel^*, H. Mohseni, J. D. Kim, J. Wojkowski, J. Sandven, J. Xu, M. Razeghi, R. Bredthauer, P. Vu, W. Mitchel, M. Ahoujja

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We report on the growth of near bulklike InSb on GaAs substrates by molecular beam epitaxy despite the 14% lattice mismatch between the epilayer and the substrate. Structural, electrical, and optical properties were measured to assess material quality. X-ray full widths at half-maximum were as low as 55 arcsec for a 10 μm epilayer, peak mobilities as high as ∼ 125 000 cm²/V s, and carrier lifetimes up to 240 ns at 80 K.

Original language	English (US)
Pages (from-to)	1071-1073
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	8
DOIs	https://doi.org/10.1063/1.119731
State	Published - Aug 25 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We report on the growth of near bulklike InSb on GaAs substrates by molecular beam epitaxy despite the 14% lattice mismatch between the epilayer and the substrate. Structural, electrical, and optical properties were measured to assess material quality. X-ray full widths at half-maximum were as low as 55 arcsec for a 10 μm epilayer, peak mobilities as high as ∼ 125 000 cm2/V s, and carrier lifetimes up to 240 ns at 80 K.",

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AU - Michel, E.

AU - Mohseni, H.

AU - Kim, J. D.

AU - Wojkowski, J.

AU - Sandven, J.

AU - Xu, J.

AU - Razeghi, M.

AU - Bredthauer, R.

AU - Vu, P.

AU - Mitchel, W.

AU - Ahoujja, M.

PY - 1997/8/25

Y1 - 1997/8/25

N2 - We report on the growth of near bulklike InSb on GaAs substrates by molecular beam epitaxy despite the 14% lattice mismatch between the epilayer and the substrate. Structural, electrical, and optical properties were measured to assess material quality. X-ray full widths at half-maximum were as low as 55 arcsec for a 10 μm epilayer, peak mobilities as high as ∼ 125 000 cm2/V s, and carrier lifetimes up to 240 ns at 80 K.

AB - We report on the growth of near bulklike InSb on GaAs substrates by molecular beam epitaxy despite the 14% lattice mismatch between the epilayer and the substrate. Structural, electrical, and optical properties were measured to assess material quality. X-ray full widths at half-maximum were as low as 55 arcsec for a 10 μm epilayer, peak mobilities as high as ∼ 125 000 cm2/V s, and carrier lifetimes up to 240 ns at 80 K.

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JF - Applied Physics Letters

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High carrier lifetime InSb grown on GaAs substrates

Abstract

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