We report on the growth of near bulklike InSb on GaAs substrates by molecular beam epitaxy despite the 14% lattice mismatch between the epilayer and the substrate. Structural, electrical, and optical properties were measured to assess material quality. X-ray full widths at half-maximum were as low as 55 arcsec for a 10 μm epilayer, peak mobilities as high as ∼ 125 000 cm2/V s, and carrier lifetimes up to 240 ns at 80 K.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)