High carrier lifetime InSb grown on GaAs substrates

E. Michel*, H. Mohseni, J. D. Kim, J. Wojkowski, J. Sandven, J. Xu, M. Razeghi, R. Bredthauer, P. Vu, W. Mitchel, M. Ahoujja

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

We report on the growth of near bulklike InSb on GaAs substrates by molecular beam epitaxy despite the 14% lattice mismatch between the epilayer and the substrate. Structural, electrical, and optical properties were measured to assess material quality. X-ray full widths at half-maximum were as low as 55 arcsec for a 10 μm epilayer, peak mobilities as high as ∼ 125 000 cm2/V s, and carrier lifetimes up to 240 ns at 80 K.

Original languageEnglish (US)
Pages (from-to)1071-1073
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number8
DOIs
StatePublished - Aug 25 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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