High carrier lifetime InSb grown on GaAs substrates

E. Michel; H. Mohseni; J. D. Kim; J. Wojkowski; J. Sandven; J. Xu; M. Razeghi; R. Bredthauer; P. Vu; W. Mitchel; M. Ahoujja

doi:10.1063/1.119731

High carrier lifetime InSb grown on GaAs substrates

E. Michel^*, H. Mohseni, J. D. Kim, J. Wojkowski, J. Sandven, J. Xu, M. Razeghi, R. Bredthauer, P. Vu, W. Mitchel, M. Ahoujja

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We report on the growth of near bulklike InSb on GaAs substrates by molecular beam epitaxy despite the 14% lattice mismatch between the epilayer and the substrate. Structural, electrical, and optical properties were measured to assess material quality. X-ray full widths at half-maximum were as low as 55 arcsec for a 10 μm epilayer, peak mobilities as high as ∼ 125 000 cm²/V s, and carrier lifetimes up to 240 ns at 80 K.

Original language	English (US)
Pages (from-to)	1071-1073
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	8
DOIs	https://doi.org/10.1063/1.119731
State	Published - Aug 25 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.119731

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@article{215c69eaf2c5476f9f1a00e6ff1e30ed,

title = "High carrier lifetime InSb grown on GaAs substrates",

abstract = "We report on the growth of near bulklike InSb on GaAs substrates by molecular beam epitaxy despite the 14% lattice mismatch between the epilayer and the substrate. Structural, electrical, and optical properties were measured to assess material quality. X-ray full widths at half-maximum were as low as 55 arcsec for a 10 μm epilayer, peak mobilities as high as ∼ 125 000 cm2/V s, and carrier lifetimes up to 240 ns at 80 K.",

author = "E. Michel and H. Mohseni and Kim, {J. D.} and J. Wojkowski and J. Sandven and J. Xu and M. Razeghi and R. Bredthauer and P. Vu and W. Mitchel and M. Ahoujja",

year = "1997",

month = aug,

day = "25",

doi = "10.1063/1.119731",

language = "English (US)",

volume = "71",

pages = "1071--1073",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - High carrier lifetime InSb grown on GaAs substrates

AU - Michel, E.

AU - Mohseni, H.

AU - Kim, J. D.

AU - Wojkowski, J.

AU - Sandven, J.

AU - Xu, J.

AU - Razeghi, M.

AU - Bredthauer, R.

AU - Vu, P.

AU - Mitchel, W.

AU - Ahoujja, M.

PY - 1997/8/25

Y1 - 1997/8/25

N2 - We report on the growth of near bulklike InSb on GaAs substrates by molecular beam epitaxy despite the 14% lattice mismatch between the epilayer and the substrate. Structural, electrical, and optical properties were measured to assess material quality. X-ray full widths at half-maximum were as low as 55 arcsec for a 10 μm epilayer, peak mobilities as high as ∼ 125 000 cm2/V s, and carrier lifetimes up to 240 ns at 80 K.

AB - We report on the growth of near bulklike InSb on GaAs substrates by molecular beam epitaxy despite the 14% lattice mismatch between the epilayer and the substrate. Structural, electrical, and optical properties were measured to assess material quality. X-ray full widths at half-maximum were as low as 55 arcsec for a 10 μm epilayer, peak mobilities as high as ∼ 125 000 cm2/V s, and carrier lifetimes up to 240 ns at 80 K.

UR - http://www.scopus.com/inward/record.url?scp=0006129464&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0006129464&partnerID=8YFLogxK

U2 - 10.1063/1.119731

DO - 10.1063/1.119731

M3 - Article

AN - SCOPUS:0006129464

VL - 71

SP - 1071

EP - 1073

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

ER -

High carrier lifetime InSb grown on GaAs substrates

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