Abstract
High-conductivity ZnSe single-crystalline films have been heteroepitaxially deposited on GaAs substrates using open-tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 10 14-1016 cm-3 and resistivities of 1-10 3 Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 955-957 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 37 |
| Issue number | 10 |
| DOIs | |
| State | Published - Dec 1 1980 |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
}
High-conductivity heteroepitaxial ZnSe films. / Besomi, Paul; Wessels, Bruce W.
In: Applied Physics Letters, Vol. 37, No. 10, 01.12.1980, p. 955-957.Research output: Contribution to journal › Article
TY - JOUR
T1 - High-conductivity heteroepitaxial ZnSe films
AU - Besomi, Paul
AU - Wessels, Bruce W
PY - 1980/12/1
Y1 - 1980/12/1
N2 - High-conductivity ZnSe single-crystalline films have been heteroepitaxially deposited on GaAs substrates using open-tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 10 14-1016 cm-3 and resistivities of 1-10 3 Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.
AB - High-conductivity ZnSe single-crystalline films have been heteroepitaxially deposited on GaAs substrates using open-tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 10 14-1016 cm-3 and resistivities of 1-10 3 Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.
UR - http://www.scopus.com/inward/record.url?scp=36749119950&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=36749119950&partnerID=8YFLogxK
U2 - 10.1063/1.91774
DO - 10.1063/1.91774
M3 - Article
VL - 37
SP - 955
EP - 957
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 10
ER -