High-conductivity heteroepitaxial ZnSe films

Paul Besomi; Bruce W. Wessels

doi:10.1063/1.91774

High-conductivity heteroepitaxial ZnSe films

Paul Besomi^*, Bruce W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

High-conductivity ZnSe single-crystalline films have been heteroepitaxially deposited on GaAs substrates using open-tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 10 ¹⁴-10¹⁶ cm^-3 and resistivities of 1-10 ³ Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.

Original language	English (US)
Pages (from-to)	955-957
Number of pages	3
Journal	Applied Physics Letters
Volume	37
Issue number	10
DOIs	https://doi.org/10.1063/1.91774
State	Published - 1980

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High-conductivity heteroepitaxial ZnSe films",

abstract = "High-conductivity ZnSe single-crystalline films have been heteroepitaxially deposited on GaAs substrates using open-tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 10 14-1016 cm-3 and resistivities of 1-10 3 Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.",

author = "Paul Besomi and Wessels, {Bruce W.}",

year = "1980",

doi = "10.1063/1.91774",

language = "English (US)",

volume = "37",

pages = "955--957",

journal = "Applied Physics Letters",

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T1 - High-conductivity heteroepitaxial ZnSe films

AU - Besomi, Paul

AU - Wessels, Bruce W.

PY - 1980

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N2 - High-conductivity ZnSe single-crystalline films have been heteroepitaxially deposited on GaAs substrates using open-tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 10 14-1016 cm-3 and resistivities of 1-10 3 Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.

AB - High-conductivity ZnSe single-crystalline films have been heteroepitaxially deposited on GaAs substrates using open-tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 10 14-1016 cm-3 and resistivities of 1-10 3 Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.

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U2 - 10.1063/1.91774

DO - 10.1063/1.91774

M3 - Article

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EP - 957

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

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High-conductivity heteroepitaxial ZnSe films

Abstract

ASJC Scopus subject areas

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