Abstract
High-conductivity ZnSe single-crystalline films have been heteroepitaxially deposited on GaAs substrates using open-tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 10 14-1016 cm-3 and resistivities of 1-10 3 Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.
Original language | English (US) |
---|---|
Pages (from-to) | 955-957 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 37 |
Issue number | 10 |
DOIs | |
State | Published - Dec 1 1980 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)