High-conductivity ZnSe single-crystalline films have been heteroepitaxially deposited on GaAs substrates using open-tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 10 14-1016 cm-3 and resistivities of 1-10 3 Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)