High-conductivity heteroepitaxial ZnSe films

Paul Besomi; Bruce W Wessels

doi:10.1063/1.91774

High-conductivity heteroepitaxial ZnSe films

Paul Besomi^*, Bruce W Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

High-conductivity ZnSe single-crystalline films have been heteroepitaxially deposited on GaAs substrates using open-tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 10 ¹⁴-10¹⁶ cm^-3 and resistivities of 1-10 ³ Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.

Original language	English (US)
Pages (from-to)	955-957
Number of pages	3
Journal	Applied Physics Letters
Volume	37
Issue number	10
DOIs	https://doi.org/10.1063/1.91774
State	Published - Dec 1 1980

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High-conductivity heteroepitaxial ZnSe films",

abstract = "High-conductivity ZnSe single-crystalline films have been heteroepitaxially deposited on GaAs substrates using open-tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 10 14-1016 cm-3 and resistivities of 1-10 3 Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.",

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AB - High-conductivity ZnSe single-crystalline films have been heteroepitaxially deposited on GaAs substrates using open-tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 10 14-1016 cm-3 and resistivities of 1-10 3 Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.

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