High-conductivity heteroepitaxial ZnSe films

Paul Besomi*, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

High-conductivity ZnSe single-crystalline films have been heteroepitaxially deposited on GaAs substrates using open-tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 10 14-1016 cm-3 and resistivities of 1-10 3 Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.

Original languageEnglish (US)
Pages (from-to)955-957
Number of pages3
JournalApplied Physics Letters
Volume37
Issue number10
DOIs
StatePublished - Dec 1 1980

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conductivity
electrical resistivity
partial pressure
zinc
vapors
tubes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Besomi, Paul ; Wessels, Bruce W. / High-conductivity heteroepitaxial ZnSe films. In: Applied Physics Letters. 1980 ; Vol. 37, No. 10. pp. 955-957.
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High-conductivity heteroepitaxial ZnSe films. / Besomi, Paul; Wessels, Bruce W.

In: Applied Physics Letters, Vol. 37, No. 10, 01.12.1980, p. 955-957.

Research output: Contribution to journalArticle

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