High conductivity zinc sulfoselenide thin films

Wallace Leigh*, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

High conductivity thin films of ZnSSe have been deposited using hydrogen vapor transport. The films grown on GaAs are single crystalline and have excellent surface morphologies. Resistivities of the as-grown material ranged from 1 to greater than 103 Ω cm depending upon zinc partial pressure of the growth ambient and sulphur concentration in the film. For a film with a composition of ZnS0.12Se0.88, a carrier concentration of n = 5×1016 cm-3 and mobility of 126 cm2/Vs were observed.

Original languageEnglish (US)
Pages (from-to)165-167
Number of pages3
JournalApplied Physics Letters
Volume41
Issue number2
DOIs
StatePublished - Dec 1 1982

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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