High conductivity zinc sulfoselenide thin films

Wallace Leigh; Bruce W. Wessels

doi:10.1063/1.93440

High conductivity zinc sulfoselenide thin films

Wallace Leigh^*, Bruce W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

High conductivity thin films of ZnSSe have been deposited using hydrogen vapor transport. The films grown on GaAs are single crystalline and have excellent surface morphologies. Resistivities of the as-grown material ranged from 1 to greater than 10³ Ω cm depending upon zinc partial pressure of the growth ambient and sulphur concentration in the film. For a film with a composition of ZnS_0.12Se_0.88, a carrier concentration of n = 5×10¹⁶ cm^-3 and mobility of 126 cm²/Vs were observed.

Original language	English (US)
Pages (from-to)	165-167
Number of pages	3
Journal	Applied Physics Letters
Volume	41
Issue number	2
DOIs	https://doi.org/10.1063/1.93440
State	Published - 1982

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "High conductivity zinc sulfoselenide thin films",

abstract = "High conductivity thin films of ZnSSe have been deposited using hydrogen vapor transport. The films grown on GaAs are single crystalline and have excellent surface morphologies. Resistivities of the as-grown material ranged from 1 to greater than 103 Ω cm depending upon zinc partial pressure of the growth ambient and sulphur concentration in the film. For a film with a composition of ZnS0.12Se0.88, a carrier concentration of n = 5×1016 cm-3 and mobility of 126 cm2/Vs were observed.",

author = "Wallace Leigh and Wessels, {Bruce W.}",

year = "1982",

doi = "10.1063/1.93440",

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AU - Leigh, Wallace

AU - Wessels, Bruce W.

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N2 - High conductivity thin films of ZnSSe have been deposited using hydrogen vapor transport. The films grown on GaAs are single crystalline and have excellent surface morphologies. Resistivities of the as-grown material ranged from 1 to greater than 103 Ω cm depending upon zinc partial pressure of the growth ambient and sulphur concentration in the film. For a film with a composition of ZnS0.12Se0.88, a carrier concentration of n = 5×1016 cm-3 and mobility of 126 cm2/Vs were observed.

AB - High conductivity thin films of ZnSSe have been deposited using hydrogen vapor transport. The films grown on GaAs are single crystalline and have excellent surface morphologies. Resistivities of the as-grown material ranged from 1 to greater than 103 Ω cm depending upon zinc partial pressure of the growth ambient and sulphur concentration in the film. For a film with a composition of ZnS0.12Se0.88, a carrier concentration of n = 5×1016 cm-3 and mobility of 126 cm2/Vs were observed.

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High conductivity zinc sulfoselenide thin films

Abstract

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