High conductivity thin films of ZnSSe have been deposited using hydrogen vapor transport. The films grown on GaAs are single crystalline and have excellent surface morphologies. Resistivities of the as-grown material ranged from 1 to greater than 103 Ω cm depending upon zinc partial pressure of the growth ambient and sulphur concentration in the film. For a film with a composition of ZnS0.12Se0.88, a carrier concentration of n = 5×1016 cm-3 and mobility of 126 cm2/Vs were observed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)