High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth

She Song Huang*, Zhi Chuan Niu, Feng Zhan, Hai Qiao Ni, Huan Zhao, Donghai Wu, Zheng Sun

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

We develop a modified two-step method of growing high-density and narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. In the first step, high-density small InAs QDs are formed by optimizing the continuous deposition amount. In the second step, deposition is carried out with a long growth interruption for every 0.1 InAs monolayer. Atomic force microscope images show that the high-density (∼5.9×1010 cm-2) good size-uniformity InAs QDs are achieved. The strong intensity and narrow linewidth (27.7 meV) of the photoluminescence spectrum show that the QDs grown in this two-step method have a good optical quality.

Original languageEnglish (US)
Pages (from-to)323-327
Number of pages5
JournalChinese Physics B
Volume17
Issue number1
DOIs
StatePublished - Jan 1 2008

Keywords

  • A modified two-step growth
  • Molecular beam epitaxy
  • Quantum dots

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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