High detectivity GaInAs-InP quantum-well infrared photodetectors grown on Si substrates

J. Jiang, C. Jelen, M. Razeghi, G. J. Brown

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

In this letter, we report an improvement in the growth and the device performance of GaInAs-InP quantum well infrared photodetectors grown on Si substrate. Material growth techniques, like low-temperature nucleation layer and thick buffer layer were used to grow InP on Si. An in situ thermal cycle annealing technique was used to reduce the threading dislocation density in the InP-on-Si. Detector dark current was reduced 2 orders of magnitude by this method. Record high detectivity of 2.3 × 109 cmHz1/2/W was obtained for QWIP-on-Si detector in the 7-9 μm range at 77 K.

Original languageEnglish (US)
Pages (from-to)372-374
Number of pages3
JournalIEEE Photonics Technology Letters
Volume14
Issue number3
DOIs
StatePublished - Mar 2002

Keywords

  • Annealing
  • Epitaxial growth
  • Indium compounds
  • Photodetectors
  • Quantum-well devices
  • Silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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