High detectivity GaInAs-InP quantum-well infrared photodetectors grown on Si substrates

J. Jiang; C. Jelen; M. Razeghi; G. J. Brown

doi:10.1109/68.986817

High detectivity GaInAs-InP quantum-well infrared photodetectors grown on Si substrates

J. Jiang, C. Jelen, M. Razeghi, G. J. Brown

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

In this letter, we report an improvement in the growth and the device performance of GaInAs-InP quantum well infrared photodetectors grown on Si substrate. Material growth techniques, like low-temperature nucleation layer and thick buffer layer were used to grow InP on Si. An in situ thermal cycle annealing technique was used to reduce the threading dislocation density in the InP-on-Si. Detector dark current was reduced 2 orders of magnitude by this method. Record high detectivity of 2.3 × 10⁹ cmHz^1/2/W was obtained for QWIP-on-Si detector in the 7-9 μm range at 77 K.

Original language	English (US)
Pages (from-to)	372-374
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	14
Issue number	3
DOIs	https://doi.org/10.1109/68.986817
State	Published - Mar 2002

Funding

Manuscript received September 27, 2001. This project was supported by Nova Research and Air Force Office of Scientific Research under Grant F08630-99-C-0087. Publisher Item Identifier S 1041-1135(02)01203-X.

Keywords

Annealing
Epitaxial growth
Indium compounds
Photodetectors
Quantum-well devices
Silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.986817

Cite this

@article{e39f8b2f4f5a438787be7f225b70f0e5,

title = "High detectivity GaInAs-InP quantum-well infrared photodetectors grown on Si substrates",

abstract = "In this letter, we report an improvement in the growth and the device performance of GaInAs-InP quantum well infrared photodetectors grown on Si substrate. Material growth techniques, like low-temperature nucleation layer and thick buffer layer were used to grow InP on Si. An in situ thermal cycle annealing technique was used to reduce the threading dislocation density in the InP-on-Si. Detector dark current was reduced 2 orders of magnitude by this method. Record high detectivity of 2.3 × 109 cmHz1/2/W was obtained for QWIP-on-Si detector in the 7-9 μm range at 77 K.",

keywords = "Annealing, Epitaxial growth, Indium compounds, Photodetectors, Quantum-well devices, Silicon",

author = "J. Jiang and C. Jelen and M. Razeghi and Brown, \{G. J.\}",

note = "Funding Information: Manuscript received September 27, 2001. This project was supported by Nova Research and Air Force Office of Scientific Research under Grant F08630-99-C-0087. Publisher Item Identifier S 1041-1135(02)01203-X.",

year = "2002",

month = mar,

doi = "10.1109/68.986817",

language = "English (US)",

volume = "14",

pages = "372--374",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - High detectivity GaInAs-InP quantum-well infrared photodetectors grown on Si substrates

AU - Jiang, J.

AU - Jelen, C.

AU - Razeghi, M.

AU - Brown, G. J.

N1 - Funding Information: Manuscript received September 27, 2001. This project was supported by Nova Research and Air Force Office of Scientific Research under Grant F08630-99-C-0087. Publisher Item Identifier S 1041-1135(02)01203-X.

PY - 2002/3

Y1 - 2002/3

N2 - In this letter, we report an improvement in the growth and the device performance of GaInAs-InP quantum well infrared photodetectors grown on Si substrate. Material growth techniques, like low-temperature nucleation layer and thick buffer layer were used to grow InP on Si. An in situ thermal cycle annealing technique was used to reduce the threading dislocation density in the InP-on-Si. Detector dark current was reduced 2 orders of magnitude by this method. Record high detectivity of 2.3 × 109 cmHz1/2/W was obtained for QWIP-on-Si detector in the 7-9 μm range at 77 K.

AB - In this letter, we report an improvement in the growth and the device performance of GaInAs-InP quantum well infrared photodetectors grown on Si substrate. Material growth techniques, like low-temperature nucleation layer and thick buffer layer were used to grow InP on Si. An in situ thermal cycle annealing technique was used to reduce the threading dislocation density in the InP-on-Si. Detector dark current was reduced 2 orders of magnitude by this method. Record high detectivity of 2.3 × 109 cmHz1/2/W was obtained for QWIP-on-Si detector in the 7-9 μm range at 77 K.

KW - Annealing

KW - Epitaxial growth

KW - Indium compounds

KW - Photodetectors

KW - Quantum-well devices

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0036504102&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036504102&partnerID=8YFLogxK

U2 - 10.1109/68.986817

DO - 10.1109/68.986817

M3 - Article

AN - SCOPUS:0036504102

SN - 1041-1135

VL - 14

SP - 372

EP - 374

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 3

ER -

High detectivity GaInAs-InP quantum-well infrared photodetectors grown on Si substrates

Abstract

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Keywords

ASJC Scopus subject areas

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